Copper-clad laminate and method of forming the same

ABSTRACT

The present disclosure relates to a copper-clad laminate that may include a copper foil layer, a fluoropolymer based adhesive layer overlying the copper foil layer, and a dielectric coating overlying the fluoropolymer based adhesive layer. The dielectric coating may include a resin matrix component, and a ceramic filler component. The ceramic filler component may include a first filler material. The dielectric coating may have an average thickness of not greater than about 20 microns.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims priority under 35 U.S.C. § 119(e) to U.S.Provisional Patent Application No. 63/126,111, entitled “COPPER-CLADLAMINATE AND METHOD OF FORMING THE SAME,” by Jennifer ADAMCHUK et al.,filed Dec. 16, 2020, which is assigned to the current assignee hereofand is incorporated by reference herein in its entirety.

FIELD OF THE DISCLOSURE

The present disclosure relates to a copper-clad laminate and methods offorming the same. In particular, the present disclosure related to acopper-clad laminate with a dielectric coating and methods of formingthe same.

BACKGROUND

Copper-clad laminates (CCLs) include a dielectric material laminatedonto or between two layers of conductive copper foil. Subsequentoperations transform such CCLs into printed circuit boards (PCBs). Whenused to form PCBs, the conductive copper foil is selectively etched toform circuitry with through holes that are drilled between layers andmetalized, i.e. plated, to establish conductivity between layers inmultilayer PCBs. CCLs must therefore exhibit excellence thermomechanicalstability. PCBs are also routinely exposed to excessively hightemperatures during manufacturing operations, such as soldering, as wellas in service. So, they must function at continuous temperatures above200° C. without deforming and withstand dramatic temperaturefluctuations while resisting moisture absorption. The dielectric layerof a CCL serves as a spacer between the conductive layers and canminimize electrical signal loss and crosstalk by blocking electricalconductivity. The lower the dielectric constant (permittivity) of thedielectric layer, the higher the speed of the electrical signal throughthe layer. A low dissipation factor, which is dependent upon temperatureand frequency, as well as the polarizability of the material, istherefore very critical for high-frequency applications. Accordingly,improved dielectric materials and dielectric layers that can be used inPCBs and other high-frequency applications are desired.

SUMMARY

According to a first aspect, a copper-clad laminate may include a copperfoil layer, a fluoropolymer based adhesive layer overlying the copperfoil layer, and a dielectric coating overlying the fluoropolymer basedadhesive layer. The dielectric coating may include a resin matrixcomponent, and a ceramic filler component. The ceramic filler componentmay include a first filler material. The dielectric coating may have anaverage thickness of not greater than about 20 microns.

According to another aspect, a copper-clad laminate may include a copperfoil layer, a fluoropolymer based adhesive layer overlying the copperfoil layer, and a dielectric coating overlying the fluoropolymer basedadhesive layer. The dielectric coating may include a resin matrixcomponent, and a ceramic filler component. The ceramic filler componentmay include a first filler material. The particle size distribution ofthe first filler material may have a D₁₀ of at least about 0.2 micronsand not greater than about 1.6, a D₅₀ of at least about 0.5 microns andnot greater than about 2.7 microns, and a D₉₀ of at least about 0.8microns and not greater than about 4.7 microns.

According to yet another aspect, a copper-clad laminate may include acopper foil layer, a fluoropolymer based adhesive layer overlying thecopper foil layer, and a dielectric coating overlying the fluoropolymerbased adhesive layer. The dielectric coating may include a resin matrixcomponent, and a ceramic filler component. The ceramic filler componentmay include a first filler material. The first filler material mayfurther have a mean particle size of not greater than about 5 microns,and a particle size distribution span (PSDS) of not greater than about5, where PSDS is equal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀particle size distribution measurement of the first filler material, D₁₀is equal to a D₁₀ particle size distribution measurement of the firstfiller material, and D₅₀ is equal to a D₅₀ particle size distributionmeasurement of the first filler material.

According to another aspect, a printed circuit board may include acopper-clad laminate. The copper-clad laminate may include a copper foillayer, a fluoropolymer based adhesive layer overlying the copper foillayer, and a dielectric coating overlying the fluoropolymer basedadhesive layer. The dielectric coating may include a resin matrixcomponent, and a ceramic filler component. The ceramic filler componentmay include a first filler material. The dielectric coating may have anaverage thickness of not greater than about 20 microns.

According to still another aspect, a printed circuit board may include acopper-clad laminate. The copper-clad laminate may include a copper foillayer, a fluoropolymer based adhesive layer overlying the copper foillayer, and a dielectric coating overlying the fluoropolymer basedadhesive layer. The dielectric coating may include a resin matrixcomponent, and a ceramic filler component. The ceramic filler componentmay include a first filler material. The particle size distribution ofthe first filler material may have a D₁₀ of at least about 0.2 micronsand not greater than about 1.6, a D₅₀ of at least about 0.5 microns andnot greater than about 2.7 microns, and a D₉₀ of at least about 0.8microns and not greater than about 4.7 microns.

According to another aspect, a printed circuit board may include acopper-clad laminate. The copper-clad laminate may include a copper foillayer, a fluoropolymer based adhesive layer overlying the copper foillayer, and a dielectric coating overlying the fluoropolymer basedadhesive layer. The dielectric coating may include a resin matrixcomponent, and a ceramic filler component. The ceramic filler componentmay include a first filler material. The first filler material mayfurther have a mean particle size of not greater than about 5 microns,and a particle size distribution span (PSDS) of not greater than about5, where PSDS is equal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀particle size distribution measurement of the first filler material, D₁₀is equal to a D₁₀ particle size distribution measurement of the firstfiller material, and D₅₀ is equal to a D₅₀ particle size distributionmeasurement of the first filler material.

According to another aspect, a method of forming a copper-clad laminatemay include providing a copper foil layer, applying a fluoropolymerbased adhesive layer overlying the copper foil layer, combining a resinmatrix precursor component and a ceramic filler precursor component toform a forming mixture, and forming the forming mixture into adielectric coating overlying the fluoropolymer based adhesive layer. Theceramic filler precursor component may include a first filler precursormaterial. The dielectric coating may have an average thickness of notgreater than about 20 microns.

According to yet another aspect, a method of forming a copper-cladlaminate may include providing a copper foil layer, applying afluoropolymer based adhesive layer overlying the copper foil layer,combining a resin matrix precursor component and a ceramic fillerprecursor component to form a forming mixture, and forming the formingmixture into a dielectric coating overlying the fluoropolymer basedadhesive layer. The ceramic filler precursor component may include afirst filler precursor material. The particle size distribution of thefirst filler material may have a D₁₀ of at least about 0.2 microns andnot greater than about 1.6, a D₅₀ of at least about 0.5 microns and notgreater than about 2.7 microns, and a D₉₀ of at least about 0.8 micronsand not greater than about 4.7 microns.

According to another aspect, a method of forming a copper-clad laminatemay include providing a copper foil layer, applying a fluoropolymerbased adhesive layer overlying the copper foil layer, combining a resinmatrix precursor component and a ceramic filler precursor component toform a forming mixture, and forming the forming mixture into adielectric coating overlying the fluoropolymer based adhesive layer. Theceramic filler precursor component may include a first filler precursormaterial. The first filler precursor material may further have a meanparticle size of not greater than about 5 microns, and a particle sizedistribution span (PSDS) of not greater than about 5, where PSDS isequal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀ particle sizedistribution measurement of the first filler precursor material, D₁₀ isequal to a D₁₀ particle size distribution measurement of the firstfiller precursor material, and D₅₀ is equal to a D₅₀ particle sizedistribution measurement of the first filler precursor material.

According to another aspect, a method of forming a printed circuit boardmay include providing a copper foil layer, applying a fluoropolymerbased adhesive layer overlying the copper foil layer, combining a resinmatrix precursor component and a ceramic filler precursor component toform a forming mixture, and forming the forming mixture into adielectric coating overlying the fluoropolymer based adhesive layer. Theceramic filler precursor component may include a first filler precursormaterial. The dielectric coating may have an average thickness of notgreater than about 20 microns.

According to yet another aspect, a method of forming a printed circuitboard may include providing a copper foil layer, applying afluoropolymer based adhesive layer overlying the copper foil layer,combining a resin matrix precursor component and a ceramic fillerprecursor component to form a forming mixture, and forming the formingmixture into a dielectric coating overlying the fluoropolymer basedadhesive layer. The ceramic filler precursor component may include afirst filler precursor material. The particle size distribution of thefirst filler material may have a D₁₀ of at least about 0.2 microns andnot greater than about 1.6, a D₅₀ of at least about 0.5 microns and notgreater than about 2.7 microns, and a D₉₀ of at least about 0.8 micronsand not greater than about 4.7 microns.

According to another aspect, a method of forming a printed circuit boardmay include providing a copper foil layer, applying a fluoropolymerbased adhesive layer overlying the copper foil layer, combining a resinmatrix precursor component and a ceramic filler precursor component toform a forming mixture, and forming the forming mixture into adielectric coating overlying the fluoropolymer based adhesive layer. Theceramic filler precursor component may include a first filler precursormaterial. The first filler precursor material may further have a meanparticle size of not greater than about 5 microns, and a particle sizedistribution span (PSDS) of not greater than about 5, where PSDS isequal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀ particle sizedistribution measurement of the first filler precursor material, D₁₀ isequal to a D₁₀ particle size distribution measurement of the firstfiller precursor material, and D₅₀ is equal to a D₅₀ particle sizedistribution measurement of the first filler precursor material.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments are illustrated by way of example and are not limited to theaccompanying figures.

FIG. 1 includes a diagram showing a copper-clad laminate forming methodaccording to embodiments described herein;

FIG. 2 includes an illustration showing the configuration of acopper-clad laminate formed according to embodiments described herein;

FIG. 3 includes a diagram showing a printed circuit board forming methodaccording to embodiments described herein; and

FIG. 4 includes an illustration showing the configuration of a printedcircuit board formed according to embodiments described herein.

Skilled artisans appreciate that elements in the figures are illustratedfor simplicity and clarity and have not necessarily been drawn to scale.

DETAILED DESCRIPTION

The following discussion will focus on specific implementations andembodiments of the teachings. The detailed description is provided toassist in describing certain embodiments and should not be interpretedas a limitation on the scope or applicability of the disclosure orteachings. It will be appreciated that other embodiments can be usedbased on the disclosure and teachings as provided herein.

The terms “comprises,” “comprising,” “includes,” “including,” “has,”“having” or any other variation thereof, are intended to cover anon-exclusive inclusion. For example, a method, article, or apparatusthat comprises a list of features is not necessarily limited only tothose features but may include other features not expressly listed orinherent to such method, article, or apparatus. Further, unlessexpressly stated to the contrary, “or” refers to an inclusive-or and notto an exclusive-or. For example, a condition A or B is satisfied by anyone of the following: A is true (or present) and B is false (or notpresent), A is false (or not present) and B is true (or present), andboth A and B are true (or present).

Embodiments described herein are generally directed to a copper-cladlaminates that may include a copper foil layer, a fluoropolymer basedadhesive layer overlying the copper foil layer, and a dielectric coatingoverlying the fluoropolymer based adhesive layer. According to certainembodiments, the dielectric coating may include a resin matrixcomponent, and a ceramic filler component.

Referring first to a method of forming a copper-clad laminate, FIG. 1includes a diagram showing a forming method 100 for forming acopper-clad laminate according to embodiments described herein.According to particular embodiments, the forming method 100 may includea first step 110 of providing a copper foil layer, a second step 120 ofapplying a fluoropolymer based adhesive layer overlying the copper foillayer, a third step 130 of combining a resin matrix precursor componentand a ceramic filler precursor component to form a forming mixture, anda fourth step 140 of forming the forming mixture into a dielectriccoating overlying the fluoropolymer based adhesive layer.

According to still other embodiments, the fluoropolymer based adhesivelayer may have a particular average thickness. For example, thefluoropolymer based adhesive layer may be at least about 0.2 microns,such as, at least about 0.5 microns or at least about 1.0 microns or atleast about 1.5 microns or at least about 2.0 microns or at least about2.5 microns or even at least about 3.0 microns. According to yet otherembodiments, the average thickness of the fluoropolymer based adhesivelayer may be not greater than about 7 microns, such as, not greater thanabout 6.5 or not greater than about 6.0 or not greater than about 5.5 ornot greater than about 5.0 not greater than about 4.9 microns or notgreater than about 4.8 microns or not greater than about 4.7 microns ornot greater than about 4.6 microns or not greater than about 4.5 micronsor not greater than about 4.4 microns or not greater than about 4.3microns or not greater than about 4.2 microns or not greater than about4.1 microns or not greater than about 4.1 microns or not greater thanabout 4.0 microns or not greater than about 3.9 microns or not greaterthan about 3.8 microns or not greater than about 3.7 microns or notgreater than about 3.6 microns or even not greater than about 3.5microns. It will be appreciated that the average thickness of thefluoropolymer based adhesive layer may be any value between, andincluding, any of the minimum and maximum values noted above. It will befurther appreciated that the average thickness of the fluoropolymerbased adhesive layer may be within a range between, and including, anyof the minimum and maximum values noted above.

According to still other embodiments, the fluoropolymer based adhesivelayer may include a particular material. For example, the fluoropolymerbased adhesive layer may include fluoropolymers (e.g.,polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene(mPTFE), co- and terpolymers of tetrafluoroethylene such as fluorinatedethylene-propylene (FEP), perfluoroalkoxy polymer resin (PFA), andmodified perfluoroalkoxy polymer resin (mPFA), and derivatives andblends thereof. According to still other embodiments, the fluoropolymerbased adhesive layer may consist of fluoropolymers (e.g.,polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene(mPTFE), co- and terpolymers of tetrafluoroethylene such as fluorinatedethylene-propylene (FEP), perfluoroalkoxy polymer resin (PFA), andmodified perfluoroalkoxy polymer resin (mPFA), and derivatives andblends thereof.

According to particular embodiments, the ceramic filler precursorcomponent may include a first filler precursor material, which may haveparticular characteristics that may improve performance of thecopper-clad laminate formed by the forming method 100.

According to certain embodiments, the first filler precursor materialmay have a particular size distribution. For purposes of embodimentsdescribed herein, the particle size distribution of a material, forexample, the particle size distribution of a first filler precursormaterial may be described using any combination of particle sizedistribution D-values D₁₀, D₅₀ and D₉₀. The D₁₀ value from a particlesize distribution is defined as a particle size value where 10% of theparticles are smaller than the value and 90% of the particles are largerthan the value. The D₅₀ value from a particle size distribution isdefined as a particle size value where 50% of the particles are smallerthan the value and 50% of the particles are larger than the value. TheD₉₀ value from a particle size distribution is defined as a particlesize value where 90% of the particles are smaller than the value and 10%of the particles are larger than the value. For purposes of embodimentsdescribed herein, particle size measurements for a particular materialare made using laser diffraction spectroscopy.

According to certain embodiments, the first filler precursor materialmay have a particular size distribution D₁₀ value. For example, the D₁₀of the first filler precursor material may be at least about 0.2microns, such as, at least about 0.3 or at least about 0.4 or at leastabout 0.5 or at least about 0.6 microns or at least about 0.7 microns orat least about 0.8 microns or at least about 0.9 microns or at leastabout 1.0 microns or at least about 1.1 microns or even at least about1.2 microns. According to still other embodiments, the D₁₀ of the firstfiller material may be not greater than about 1.6 microns, such as, notgreater than about 1.5 microns or even not greater than about 1.4microns. It will be appreciated that the D₁₀ of the first fillerprecursor material may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the D₁₀ of the first filler precursor material may be within arange between, and including, any of the minimum and maximum valuesnoted above.

According to other embodiments, the first filler precursor material mayhave a particular size distribution D₅₀ value. For example, the D₅₀ ofthe first filler precursor material may be at least about 0.5 microns,such as, at least about 0.6 or at least about 0.7 or at least about 0.8or at least about 0.9 microns or at least about 1.0 microns or at leastabout 1.1 microns or at least about 1.2 microns or at least about 1.3microns or at least about 1.4 microns or at least about 1.5 microns orat least about 1.6 microns or at least about 1.7 microns or at leastabout 1.8 microns or at least about 1.9 microns or at least about 2.0microns or at least about 2.1 microns or even at least about 2.2microns. According to still other embodiments, the D₅₀ of the firstfiller material may be not greater than about 2.7 microns, such as, notgreater than about 2.6 microns or not greater than about 2.5 microns oreven not greater than about 2.4. It will be appreciated that the D₅₀ ofthe first filler precursor material may be any value between, andincluding, any of the minimum and maximum values noted above. It will befurther appreciated that the D₅₀ of the first filler precursor materialmay be within a range between, and including, any of the minimum andmaximum values noted above.

According to other embodiments, the first filler precursor material mayhave a particular size distribution D₉₀ value. For example, the D₉₀ ofthe first filler precursor material may be at least about 0.8 microns,such as, at least about 0.9 or at least about 1.0 or at least about 1.1or at least about 1.2 or at least about 1.3 or at least about 1.4 or atleast about 1.5 or at least about 1.6 microns or at least about 1.7microns or at least about 1.8 microns or at least about 1.9 microns orat least about 2.0 microns or at least about 2.1 microns or at leastabout 2.2 microns or at least about 2.3 microns or at least about 2.4microns or at least about 2.5 microns or at least about 2.6 microns oreven at least about 2.7 microns. According to still other embodiments,the D₉₀ of the first filler material may be not greater than about 8.0microns, such as, not greater than about 7.5 microns or not greater thanabout 7.0 microns or not greater than about 6.5 microns or not greaterthan about 6.0 microns or not greater than about 5.5 microns or notgreater than about 5.4 microns or not greater than about 5.3 microns ornot greater than about 5.2 or even not greater than about 5.1 microns.It will be appreciated that the D₉₀ of the first filler precursormaterial may be any value between, and including, any of the minimum andmaximum values noted above. It will be further appreciated that the D₉₀of the first filler precursor material may be within a range between,and including, any of the minimum and maximum values noted above.

According to still other embodiments, the first filler precursormaterial may have a particular mean particle size as measured usinglaser diffraction spectroscopy. For example, the mean particle size ofthe first filler precursor material may be not greater than about 10microns, such as, not greater than about 9 microns or not greater thanabout 8 microns or not greater than about 7 microns or not greater thanabout 6 microns or not greater than about 5 microns or not greater thanabout 4 microns or not greater than about 3 microns or even not greaterthan about 2 microns. It will be appreciated that the mean particle sizeof the first filler precursor material may be any value between, andincluding, any of the values noted above. It will be further appreciatedthat the mean particle size of the first filler precursor material maybe within a range between, and including, any of the values noted above.

According to still other embodiments, the first filler precursormaterial may be described as having a particular particle sizedistribution span (PSDS), where the PSDS is equal to (D₉₀−D₁₀)/D₅₀,where D₉₀ is equal to a D₉₀ particle size distribution measurement ofthe first filler precursor material, D₁₀ is equal to a D₁₀ particle sizedistribution measurement of the first filler precursor material, and D₅₀is equal to a D₅₀ particle size distribution measurement of the firstfiller precursor material. For example, the PSDS of the first fillerprecursor material may be not greater than about 5, such as, not greaterthan about 4.5 or not greater than about 4.0 or not greater than about3.5 or not greater than about 3.0 or even not greater than about 2.5. Itwill be appreciated that the PSDS of the first filler precursor materialmay be any value between, and including, any of the values noted above.It will be further appreciated that the PSDS of the first fillerprecursor material may be within a range between, and including, any ofthe values noted above.

According to still other embodiments, the first filler precursormaterial may be described as having a particular average surface area asmeasured using Brunauer-Emmett-Teller (BET) surface area analysis(Nitrogen Adsorption). For example, the first filler precursor materialmay have an average surface area of not greater than about 10 m²/g, suchas, not greater than about 9.9 m²/g or not greater than about 9.5 m²/gor not greater than about 9.0 m²/g or not greater than about 8.5 m²/g ornot greater than about 8.0 m²/g or not greater than about 7.5 m²/g ornot greater than about 7.0 m²/g or not greater than about 6.5 m²/g ornot greater than about 6.0 m²/g or not greater than about 5.5 m²/g ornot greater than about 5.0 m²/g or not greater than about 4.5 m²/g ornot greater than about 4.0 m²/g or even not greater than about 3.5 m²/g.According to still other embodiments, the first filler precursormaterial may have an average surface area of at least about 1.2 m²/g,such as, at least about 2.2 m²/g. It will be appreciated that theaverage surface area of the first filler precursor material may be anyvalue between, and including, any of the minimum and maximum valuesnoted above. It will be further appreciated that the average surfacearea of the first filler precursor material may be within a rangebetween, and including, any of the minimum and maximum values notedabove.

According to other embodiments, the first filler precursor material mayinclude a particular material. According to particular embodiments, thefirst filler precursor material may include a silica based compound.According to still other embodiments, the first filler precursormaterial may consist of a silica based compound. According to otherembodiments, the first filler precursor material may include silica.According to still other embodiments, the first filler precursormaterial may consist of silica.

According to yet other embodiments, the forming mixture may include aparticular content of the ceramic filler precursor component. Forexample, the content of the ceramic filler precursor component may be atleast about 30 vol. % for a total volume of the first forming mixture,such as, at least about 31 vol. % or at least about 32 vol. % or atleast about 33 vol. % or at least about 34 vol. % or at least about 35vol. % or at least about 36 vol. % or at least about 37 vol. % or atleast about 38 vol. % or at least about 39 vol. % or at least about 40vol. % or at least about 41 vol. % or at least about 42 vol. % or atleast about 43 vol. % or at least about 44 vol. % or at least about 45vol. % or at least about 46 vol. % or at least about 47 vol. % or atleast about 48 vol. % or at least about 49 vol. % or at least about 50vol. % or at least about 51 vol. % or at least about 52 vol. % or atleast about 53 vol. % or even at least about 54 vol. %. According tostill other embodiments, the content of the ceramic filler precursorcomponent may be not greater than about 57 vol. % for a total volume ofthe forming mixture, such as, not greater than about 56 vol. % or evennot greater than about 55 vol. %. It will be appreciated that thecontent of the ceramic filler precursor component may be any valuebetween, and including, any of the minimum and maximum values notedabove. It will be further appreciated that the content of the ceramicfiller precursor component may be within a range between, and including,any of the minimum and maximum values noted above.

According to still other embodiments, the ceramic filler precursorcomponent may include a particular content of the first filler precursormaterial. For example, the content of the first filler precursormaterial may be at least about 80 vol. % for a total volume of theceramic filler precursor component, such as, at least about 81 vol. % orat least about 82 vol. % or at least about 83 vol. % or at least about84 vol. % or at least about 85 vol. % or at least about 86 vol. % or atleast about 87 vol. % or at least about 88 vol. % or at least about 89vol. % or even at least about 90 vol. %. According to still otherembodiments, the content of the first filler precursor material may benot greater than about 100 vol. % for a total volume of the ceramicfiller precursor component, such as, not greater than about 99 vol. % ornot greater than about 98 vol. % or not greater than about 97 vol. % ornot greater than about 96 vol. % or not greater than about 95 vol. % ornot greater than about 94 vol. % or not greater than about 93 vol. % oreven not greater than about 92 vol. %. It will be appreciated that thecontent of the first filler precursor material may be any value between,and including, any of the minimum and maximum values noted above. Itwill be further appreciated that the content of the first fillerprecursor material may be within a range between, and including, any ofthe minimum and maximum values noted above.

According to still other embodiments, the ceramic filler precursorcomponent may include a second filler precursor material.

According to yet other embodiments, the second filler precursor materialmay include a particular material. For example, the second fillerprecursor material may include a high dielectric constant ceramicmaterial, such as, a ceramic material having a dielectric constant of atleast about 14. According to particular embodiments, the second fillerprecursor material may include any high dielectric constant ceramicmaterial, such as, TiO₂, SrTiO₃, ZrTi₂O₆, MgTiO₃, CaTiO₃, BaTiO₄ or anycombination thereof.

According to yet other embodiments, the second filler precursor materialmay include TiO₂. According to still other embodiments, the secondfiller precursor material may consist of TiO₂.

According to still other embodiments, the ceramic filler precursorcomponent may include a particular content of the second fillerprecursor material. For example, the content of the second fillerprecursor material may be at least about 1 vol. % for a total volume ofthe ceramic filler precursor component, such as, at least about 2 vol. %or at least about 3 vol. % or at least about 4 vol. % or at least about5 vol. % or at least about 6 vol. % or at least about 7 vol. % or atleast about 8 vol. % or at least about 9 vol. % or at least about 10vol. %. According to still other embodiments, the content of the secondfiller precursor material may be not greater than about 20 vol. % for atotal volume of the ceramic filler precursor component, such as, notgreater than about 19 vol. % or not greater than about 18 vol. % or notgreater than about 17 vol. % or not greater than about 16 vol. % or notgreater than about 15 vol. % or not greater than about 14 vol. % or notgreater than about 13 vol. % or not greater than about 12 vol. %. Itwill be appreciated that the content of the second filler precursormaterial may be any value between, and including, any of the minimum andmaximum values noted above. It will be further appreciated that thecontent of the second filler precursor material may be within a rangebetween, and including, any of the minimum and maximum values notedabove.

According to yet other embodiments, the ceramic filler precursorcomponent may include a particular content of amorphous material. Forexample, the ceramic filler precursor component may include at leastabout 97% amorphous material, such as, at least about 98% or even atleast about 99%. It will be appreciated that the content of amorphousmaterial may be any value between, and including, any of the valuesnoted above. It will be further appreciated that the content of thecontent of amorphous material may be within a range between, andincluding, any of the values noted above.

According to other embodiments, the resin matrix precursor component mayinclude a particular material. For example, the resin matrix precursorcomponent may include a perfluoropolymer. According to still otherembodiments, the resin matrix precursor component may consist of aperfluoropolymer.

According to yet other embodiments, the perfluoropolymer of the resinmatrix precursor component may include a copolymer oftetrafluoroethylene (TFE); a copolymer of hexafluoropropylene (HFP); aterpolymer of tetrafluoroethylene (TFE); or any combination thereof.According to other embodiments, the perfluoropolymer of the resin matrixprecursor component may consist of a copolymer of tetrafluoroethylene(TFE); a copolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

According to yet other embodiments, the perfluoropolymer of the resinmatrix precursor component may include polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof. According to still other embodiments,the perfluoropolymer of the resin matrix precursor component may consistof polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA),fluorinated ethylene propylene (FEP), or any combination thereof.

According to yet other embodiments, the forming mixture may include aparticular content of the resin matrix precursor component. For example,the content of the resin matrix precursor component may be at leastabout 45 vol. % for a total volume of the forming mixture, such as, atleast about 46 vol. % or at least about 47 vol. % or at least about 48vol. % or at least about 49 vol. % or at least about 50 vol. % or atleast about 51 vol. % or at least about 52 vol. % or at least about 53vol. % or at least about 54 vol. % or even at least about 55 vol. %.According to still other embodiments, the content of the resin matrixprecursor component is not greater than about 63 vol. % for a totalvolume of the forming mixture or not greater than about 62 vol. % or notgreater than about 61 vol. % or not greater than about 60 vol. % or notgreater than about 59 vol. % or not greater than about 58 vol. % or evennot greater than about 57 vol. %. It will be appreciated that thecontent of the resin matrix precursor component may be any valuebetween, and including, any of the minimum and maximum values notedabove. It will be further appreciated that the content of the resinmatrix precursor component may be within a range between, and including,any of the minimum and maximum values noted above.

According to yet other embodiments, the forming mixture may include aparticular content of the perfluoropolymer. For example, the content ofthe perfluoropolymer may be at least about 45 vol. % for a total volumeof the forming mixture, such as, at least about 46 vol. % or at leastabout 47 vol. % or at least about 48 vol. % or at least about 49 vol. %or at least about 50 vol. % or at least about 51 vol. % or at leastabout 52 vol. % or at least about 53 vol. % or at least about 54 vol. %or even at least about 55 vol. %. According to still other embodiments,the content of the perfluoropolymer may be not greater than about 63vol. % for a total volume of the forming mixture, such as, not greaterthan about 62 vol. % or not greater than about 61 vol. % or not greaterthan about 60 vol. % or not greater than about 59 vol. % or not greaterthan about 58 vol. % or even not greater than about 57 vol. %. It willbe appreciated that the content of the perfluoropolymer may be any valuebetween, and including, any of the minimum and maximum values notedabove. It will be further appreciated that the content of theperfluoropolymer may be within a range between, and including, any ofthe minimum and maximum values noted above.

Referring now to embodiments of the copper-clad laminate formedaccording to forming method 100, FIG. 2 includes diagram of acopper-clad lamination 200. As shown in FIG. 2, the copper-clad laminate200 may include a copper foil layer 202, a fluoropolymer based adhesivelayer 203 overlying the copper foil layer 202, and a dielectric coating205 overlying a surface of the fluoropolymer based adhesive layer 203.According to certain embodiments, the dielectric coating 205 may includea resin matrix component 210 and a ceramic filler component 220.

According to still other embodiments, the fluoropolymer based adhesivelayer 203 may have a particular average thickness. For example, thefluoropolymer based adhesive layer 203 may be at least about 0.2microns, such as, at least about 0.5 microns or at least about 1.0microns or at least about 1.5 microns or at least about 2.0 microns orat least about 2.5 microns or even at least about 3.0 microns. Accordingto yet other embodiments, the average thickness of the fluoropolymerbased adhesive layer 203 may be not greater than about 7 microns, suchas, not greater than about 6.5 or not greater than about 6.0 or notgreater than about 5.5 or not greater than about 5.0 not greater thanabout 4.9 microns or not greater than about 4.8 microns or not greaterthan about 4.7 microns or not greater than about 4.6 microns or notgreater than about 4.5 microns or not greater than about 4.4 microns ornot greater than about 4.3 microns or not greater than about 4.2 micronsor not greater than about 4.1 microns or not greater than about 4.1microns or not greater than about 4.0 microns or not greater than about3.9 microns or not greater than about 3.8 microns or not greater thanabout 3.7 microns or not greater than about 3.6 microns or even notgreater than about 3.5 microns. It will be appreciated that the averagethickness of the fluoropolymer based adhesive layer 203 may be any valuebetween, and including, any of the minimum and maximum values notedabove. It will be further appreciated that the average thickness of thefluoropolymer based adhesive layer 203 may be within a range between,and including, any of the minimum and maximum values noted above.

According to still other embodiments, the fluoropolymer based adhesivelayer 203 may include a particular material. For example, thefluoropolymer based adhesive layer 203 may include fluoropolymers (e.g.,polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene(mPTFE), co- and terpolymers of tetrafluoroethylene such as fluorinatedethylene-propylene (FEP), perfluoroalkoxy polymer resin (PFA), andmodified perfluoroalkoxy polymer resin (mPFA), and derivatives andblends thereof. According to still other embodiments, the fluoropolymerbased adhesive layer may consist of fluoropolymers (e.g.,polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene(mPTFE), co- and terpolymers of tetrafluoroethylene such as fluorinatedethylene-propylene (FEP), perfluoroalkoxy polymer resin (PFA), andmodified perfluoroalkoxy polymer resin (mPFA), and derivatives andblends thereof.

According to particular embodiments, the ceramic filler component 220may include a first filler material, which may have particularcharacteristics that may improve performance of the copper-clad laminate200.

According to certain embodiments, the first filler material of theceramic filler component 220 may have a particular size distribution.For purposes of embodiments described herein, the particle sizedistribution of a material, for example, the particle size distributionof a first filler material may be described using any combination ofparticle size distribution D-values D₁₀, D₅₀ and D₉₀. The D₁₀ value froma particle size distribution is defined as a particle size value where10% of the particles are smaller than the value and 90% of the particlesare larger than the value. The D₅₀ value from a particle sizedistribution is defined as a particle size value where 50% of theparticles are smaller than the value and 50% of the particles are largerthan the value. The D₉₀ value from a particle size distribution isdefined as a particle size value where 90% of the particles are smallerthan the value and 10% of the particles are larger than the value. Forpurposes of embodiments described herein, particle size measurements fora particular material are made using laser diffraction spectroscopy.

According to certain embodiments, the first filler material of theceramic filler component 220 may have a particular size distribution D₁₀value. For example, the D₁₀ of the first filler material may be at leastabout 0.2 microns, such as, at least about 0.3 or at least about 0.4 orat least about 0.5 or at least about 0.6 microns or at least about 0.7microns or at least about 0.8 microns or at least about 0.9 microns orat least about 1.0 microns or at least about 1.1 microns or even atleast about 1.2 microns. According to still other embodiments, the D₁₀of the first filler material may be not greater than about 1.6 microns,such as, not greater than about 1.5 microns or even not greater thanabout 1.4 microns. It will be appreciated that the D₁₀ of the firstfiller material may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the D₁₀ of the first filler material may be within a range between,and including, any of the minimum and maximum values noted above.

According to other embodiments, the first filler material of the ceramicfiller component 420 may have a particular size distribution D₅₀ value.For example, the D₅₀ of the first filler material may be at least about0.5 microns, such as, at least about 0.6 or at least about 0.7 or atleast about 0.8 or at least about 0.9 microns or at least about 1.0microns or at least about 1.1 microns or at least about 1.2 microns orat least about 1.3 microns or at least about 1.4 microns or at leastabout 1.5 microns or at least about 1.6 microns or at least about 1.7microns or at least about 1.8 microns or at least about 1.9 microns orat least about 2.0 microns or at least about 2.1 microns or even atleast about 2.2 microns. According to still other embodiments, the D₅₀of the first filler material may be not greater than about 2.7 microns,such as, not greater than about 2.6 microns or not greater than about2.5 microns or even not greater than about 2.4. It will be appreciatedthat the D₅₀ of the first filler material may be any value between, andincluding, any of the minimum and maximum values noted above. It will befurther appreciated that the D₅₀ of the first filler material may bewithin a range between, and including, any of the minimum and maximumvalues noted above.

According to other embodiments, the first filler material of the ceramicfiller component 220 may have a particular size distribution D₉₀ value.For example, the D₉₀ of the first filler material may be at least about0.8 microns, such as, at least about 0.9 or at least about 1.0 or atleast about 1.1 or at least about 1.2 or at least about 1.3 or at leastabout 1.4 or at least about 1.5 or at least about 1.6 microns or atleast about 1.7 microns or at least about 1.8 microns or at least about1.9 microns or at least about 2.0 microns or at least about 2.1 micronsor at least about 2.2 microns or at least about 2.3 microns or at leastabout 2.4 microns or at least about 2.5 microns or at least about 2.6microns or even at least about 2.7 microns. According to still otherembodiments, the D₉₀ of the first filler material may be not greaterthan about 8.0 microns, such as, not greater than about 7.5 microns ornot greater than about 7.0 microns or not greater than about 6.5 micronsor not greater than about 6.0 microns or not greater than about 5.5microns or not greater than about 5.4 microns or not greater than about5.3 microns or not greater than about 5.2 or even not greater than about5.1 microns. It will be appreciated that the D₉₀ of the first fillermaterial may be any value between, and including, any of the minimum andmaximum values noted above. It will be further appreciated that the D₉₀of the first filler material may be within a range between, andincluding, any of the minimum and maximum values noted above.

According to still other embodiments, the first filler material of theceramic filler component 220 may have a particular mean particle size asmeasured using laser diffraction spectroscopy. For example, the meanparticle size of the first filler material may be not greater than about10 microns, such as, not greater than about 9 microns or not greaterthan about 8 microns or not greater than about 7 microns or not greaterthan about 6 microns or not greater than about 5 microns or not greaterthan about 4 microns or not greater than about 3 microns or even notgreater than about 2 microns. It will be appreciated that the meanparticle size of the first filler material may be any value between, andincluding, any of the values noted above. It will be further appreciatedthat the mean particle size of the first filler material may be within arange between, and including, any of the values noted above.

According to still other embodiments, the first filler material of theceramic filler component 220 may be described as having a particularparticle size distribution span (PSDS), where the PSDS is equal to(D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀ particle size distributionmeasurement of the first filler material, D₁₀ is equal to a D₁₀ particlesize distribution measurement of the first filler material, and D₅₀ isequal to a D₅₀ particle size distribution measurement of the firstfiller material. For example, the PSDS of the first filler material maybe not greater than about 5, such as, not greater than about 4.5 or notgreater than about 4.0 or not greater than about 3.5 or not greater thanabout 3.0 or even not greater than about 2.5. It will be appreciatedthat the PSDS of the first filler material may be any value between, andincluding, any of the values noted above. It will be further appreciatedthat the PSDS of the first filler material may be within a rangebetween, and including, any of the values noted above.

According to still other embodiments, the first filler material of theceramic filler component 220 may be described as having a particularaverage surface area as measured using Brunauer-Emmett-Teller (BET)surface area analysis (Nitrogen Adsorption). For example, the firstfiller material may have an average surface area of not greater thanabout 10 m²/g, such as, not greater than about 9.9 m²/g or not greaterthan about 9.5 m²/g or not greater than about 9.0 m²/g or not greaterthan about 8.5 m²/g or not greater than about 8.0 m²/g m²/g or notgreater than about 7.5 m²/g or not greater than about 7.0 m²/g or notgreater than about 6.5 m²/g or not greater than about 6.0 m²/g or notgreater than about 5.5 m²/g or not greater than about 5.0 m²/g or notgreater than about 4.5 m²/g or not greater than about 4.0 m²/g or evennot greater than about 3.5 m²/g. According to still other embodiments,the first filler material may have an average surface area of at leastabout 1.2 m²/g, such as, at least about 2.2 m²/g. It will be appreciatedthat the average surface area of the first filler material may be anyvalue between, and including, any of the minimum and maximum valuesnoted above. It will be further appreciated that the average surfacearea of the first filler material may be within a range between, andincluding, any of the minimum and maximum values noted above.

According to other embodiments, the first filler material of the ceramicfiller component 220 may include a particular material. According toparticular embodiments, the first filler material may include a silicabased compound. According to still other embodiments, the first fillermaterial may consist of a silica based compound. According to otherembodiments, the first filler material may include silica. According tostill other embodiments, the first filler material may consist ofsilica.

According to yet other embodiments, the dielectric coating 205 mayinclude a particular content of the ceramic filler component 220. Forexample, the content of the ceramic filler component 220 may be at leastabout 30 vol. % for a total volume of the dielectric coating 205, suchas, at least about 31 vol. % or at least about 32 vol. % or at leastabout 33 vol. % or at least about 34 vol. % or at least about 35 vol. %or at least about 36 vol. % or at least about 37 vol. % or at leastabout 38 vol. % or at least about 39 vol. % or at least about 40 vol. %or at least about 41 vol. % or at least about 42 vol. % or at leastabout 43 vol. % or at least about 44 vol. % or at least about 45 vol. %or at least about 46 vol. % or at least about 47 vol. % or at leastabout 48 vol. % or at least about 49 vol. % or at least about 50 vol. %or at least about 51 vol. % or at least about 52 vol. % or at leastabout 53 vol. % or even at least about 54 vol. %. According to stillother embodiments, the content of the ceramic filler component 220 maybe not greater than about 57 vol. % for a total volume of the dielectriccoating 400, such as, not greater than about 56 vol. % or even notgreater than about 55 vol. %. It will be appreciated that the content ofthe ceramic filler component 220 may be any value between, andincluding, any of the minimum and maximum values noted above. It will befurther appreciated that the content of the ceramic filler component 220may be within a range between, and including, any of the minimum andmaximum values noted above.

According to still other embodiments, the ceramic filler component 220may include a particular content of the first filler material. Forexample, the content of the first filler material may be at least about80 vol. % for a total volume of the ceramic filler component 220, suchas, at least about 81 vol. % or at least about 82 vol. % or at leastabout 83 vol. % or at least about 84 vol. % or at least about 85 vol. %or at least about 86 vol. % or at least about 87 vol. % or at leastabout 88 vol. % or at least about 89 vol. % or even at least about 90vol. %. According to still other embodiments, the content of the firstfiller material may be not greater than about 100 vol. % for a totalvolume of the ceramic filler component 220, such as, not greater thanabout 99 vol. % or not greater than about 98 vol. % or not greater thanabout 97 vol. % or not greater than about 96 vol. % or not greater thanabout 95 vol. % or not greater than about 94 vol. % or not greater thanabout 93 vol. % or even not greater than about 92 vol. %. It will beappreciated that the content of the first filler material may be anyvalue between, and including, any of the minimum and maximum valuesnoted above. It will be further appreciated that the content of thefirst filler material may be within a range between, and including, anyof the minimum and maximum values noted above.

According to still other embodiments, the ceramic filler component 220may include a second filler material.

According to yet other embodiments, the second filler material of theceramic filler component 220 may include a particular material. Forexample, the second filler material may include a high dielectricconstant ceramic material, such as, a ceramic material having adielectric constant of at least about 14. According to particularembodiments, the second filler material of the ceramic filler component220 may include any high dielectric constant ceramic material, such as,TiO₂, SrTiO₃, ZrTi₂O₆, MgTiO₃, CaTiO₃, BaTiO₄ or any combinationthereof.

According to yet other embodiments, the second filler material of theceramic filler component 220 may include TiO₂. According to still otherembodiments, the second filler material may consist of TiO₂.

According to still other embodiments, the ceramic filler component 220may include a particular content of the second filler material. Forexample, the content of the second filler material may be at least about1 vol. % for a total volume of the ceramic filler component 220, suchas, at least about 2 vol. % or at least about 3 vol. % or at least about4 vol. % or at least about 5 vol. % or at least about 6 vol. % or atleast about 7 vol. % or at least about 8 vol. % or at least about 9 vol.% or at least about 10 vol. %. According to still other embodiments, thecontent of the second filler material may be not greater than about 20vol. % for a total volume of the ceramic filler component 220, such as,not greater than about 19 vol. % or not greater than about 18 vol. % ornot greater than about 17 vol. % or not greater than about 16 vol. % ornot greater than about 15 vol. % or not greater than about 14 vol. % ornot greater than about 13 vol. % or not greater than about 12 vol. %. Itwill be appreciated that the content of the second filler material maybe any value between, and including, any of the minimum and maximumvalues noted above. It will be further appreciated that the content ofthe second filler material may be within a range between, and including,any of the minimum and maximum values noted above.

According to yet other embodiments, the ceramic filler component 220 mayinclude a particular content of amorphous material. For example, theceramic filler component 220 may include at least about 97% amorphousmaterial, such as, at least about 98% or even at least about 99%. Itwill be appreciated that the content of amorphous material may be anyvalue between, and including, any of the values noted above. It will befurther appreciated that the content of the content of amorphousmaterial may be within a range between, and including, any of the valuesnoted above.

According to other embodiments, the resin matrix component 210 mayinclude a particular material. For example, the resin matrix component210 may include a perfluoropolymer. According to still otherembodiments, the resin matrix component 210 may consist of aperfluoropolymer.

According to yet other embodiments, the perfluoropolymer of the resinmatrix component 210 may include a copolymer of tetrafluoroethylene(TFE); a copolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof. According toother embodiments, the perfluoropolymer of the resin matrix component210 may consist of a copolymer of tetrafluoroethylene (TFE); a copolymerof hexafluoropropylene (HFP); a terpolymer of tetrafluoroethylene (TFE);or any combination thereof.

According to yet other embodiments, the perfluoropolymer of the resinmatrix component 210 may include polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof. According to still other embodiments,the perfluoropolymer of the resin matrix component 210 may consist ofpolytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA),fluorinated ethylene propylene (FEP), or any combination thereof.

According to yet other embodiments, the dielectric coating 200 mayinclude a particular content of the resin matrix component 210. Forexample, the content of the resin matrix component 210 may be at leastabout 50 vol. % for a total volume of the dielectric coating 200, suchas, at least about 51 vol. % or at least about 52 vol. % or at leastabout 53 vol. % or at least about 54 vol. % or even at least about 55vol. %. According to still other embodiments, the content of the resinmatrix component 210 is not greater than about 63 vol. % for a totalvolume of the dielectric coating 200 or not greater than about 62 vol. %or not greater than about 61 vol. % or not greater than about 60 vol. %or not greater than about 59 vol. % or not greater than about 58 vol. %or even not greater than about 57 vol. %. It will be appreciated thatthe content of the resin matrix component 210 may be any value between,and including, any of the minimum and maximum values noted above. Itwill be further appreciated that the content of the resin matrixcomponent 210 may be within a range between, and including, any of theminimum and maximum values noted above.

According to yet other embodiments, the dielectric coating 205 mayinclude a particular content of the perfluoropolymer. For example, thecontent of the perfluoropolymer may be at least about 50 vol. % for atotal volume of the dielectric coating 205, such as, at least about 51vol. % or at least about 52 vol. % or at least about 53 vol. % or atleast about 54 vol. % or even at least about 55 vol. %. According tostill other embodiments, the content of the perfluoropolymer may be notgreater than about 63 vol. % for a total volume of the dielectriccoating 205, such as, not greater than about 62 vol. % or not greaterthan about 61 vol. % or not greater than about 60 vol. % or not greaterthan about 59 vol. % or not greater than about 58 vol. % or even notgreater than about 57 vol. %. It will be appreciated that the content ofthe perfluoropolymer may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the content of the perfluoropolymer may be within a range between,and including, any of the minimum and maximum values noted above.

According to still other embodiments, the dielectric coating 205 mayinclude a particular porosity as measured using x-ray diffraction. Forexample, the porosity of the substrate 205 may be not greater than about10 vol. %, such as, not greater than about 9 vol. % or not greater thanabout 8 vol. % or not greater than about 7 vol. % or not greater thanabout 6 vol. % or even not greater than about 5 vol. %. It will beappreciated that the porosity of the dielectric coating 205 may be anyvalue between, and including, any of the values noted above. It will befurther appreciated that the porosity of the dielectric coating 205 maybe within a range between, and including, any of the values noted above.

According to yet other embodiments, the dielectric coating 205 may havea particular average thickness. For example, the average thickness ofthe dielectric coating 205 may be at least about 0.1 microns, such as,at least about 0.5 microns or at least about 1 micron or at least about2 microns or at least about 3 microns or at least about 4 microns oreven at least about 5 microns. According to yet other embodiments, theaverage thickness of the dielectric coating 205 may be not greater thanabout 20 microns, such as, not greater than about 18 microns or notgreater than about 16 microns or not greater than about 14 microns ornot greater than about 12 microns or even not greater than about 10microns. It will be appreciated that the average thickness of thedielectric coating 205 may be any value between, and including, any ofthe minimum and maximum values noted above. It will be furtherappreciated that the average thickness of the dielectric coating 205 maybe within a range between, and including, any of the minimum and maximumvalues noted above.

According to yet other embodiments, the dielectric coating 205 may havea particular dissipation factor (Df) as measured in the range between 5GHz, 20% RH. For example, the dielectric coating 205 may have adissipation factor of not greater than about 0.005, such as, not greaterthan about 0.004 or not greater than about 0.003 or not greater thanabout 0.002 or not greater than about 0.0019 or not greater than about0.0018 or not greater than about 0.0017 or not greater than about 0.0016or not greater than about 0.0015 or not greater than about 0.0014. Itwill be appreciated that the dissipation factor of the dielectriccoating 205 may be any value between, and including, any of the valuesnoted above. It will be further appreciated that the dissipation factorof the dielectric coating 205 may be within a range between, andincluding, any of the values noted above.

According to yet other embodiments, the dielectric coating 205 may havea particular dissipation factor (Df) as measured in the range between 5GHz, 80% RH. For example, the dielectric coating 205 may have adissipation factor of not greater than about 0.005, such as, not greaterthan about 0.004 or not greater than about 0.003 or not greater thanabout 0.002 or not greater than about 0.0019 or not greater than about0.0018 or not greater than about 0.0017 or not greater than about 0.0016or not greater than about 0.0015 or not greater than about 0.0014. Itwill be appreciated that the dissipation factor of the dielectriccoating 205 may be any value between, and including, any of the valuesnoted above. It will be further appreciated that the dissipation factorof the dielectric coating 205 may be within a range between, andincluding, any of the values noted above.

According to yet other embodiments, the dielectric coating 205 may havea particular dissipation factor (Df) as measured in the range between 10GHz, 20% RH. For example, the dielectric coating 205 may have adissipation factor of not greater than about 0.005, such as, not greaterthan about 0.004 or not greater than about 0.003 or not greater thanabout 0.002 or not greater than about 0.0019 or not greater than about0.0018 or not greater than about 0.0017 or not greater than about 0.0016or not greater than about 0.0015 or not greater than about 0.0014. Itwill be appreciated that the dissipation factor of the dielectriccoating 205 may be any value between, and including, any of the valuesnoted above. It will be further appreciated that the dissipation factorof the dielectric coating 205 may be within a range between, andincluding, any of the values noted above.

According to yet other embodiments, the dielectric coating 205 may havea particular dissipation factor (Df) as measured in the range between 10GHz, 80% RH. For example, the dielectric coating 205 may have adissipation factor of not greater than about 0.005, such as, not greaterthan about 0.004 or not greater than about 0.003 or not greater thanabout 0.002 or not greater than about 0.0019 or not greater than about0.0018 or not greater than about 0.0017 or not greater than about 0.0016or not greater than about 0.0015 or not greater than about 0.0014. Itwill be appreciated that the dissipation factor of the dielectriccoating 205 may be any value between, and including, any of the valuesnoted above. It will be further appreciated that the dissipation factorof the dielectric coating 205 may be within a range between, andincluding, any of the values noted above.

According to yet other embodiments, the dielectric coating 205 may havea particular dissipation factor (Df) as measured in the range between 28GHz, 20% RH. For example, the dielectric coating 205 may have adissipation factor of not greater than about 0.005, such as, not greaterthan about 0.004 or not greater than about 0.003 or not greater thanabout 0.002 or not greater than about 0.0019 or not greater than about0.0018 or not greater than about 0.0017 or not greater than about 0.0016or not greater than about 0.0015 or not greater than about 0.0014. Itwill be appreciated that the dissipation factor of the dielectriccoating 205 may be any value between, and including, any of the valuesnoted above. It will be further appreciated that the dissipation factorof the dielectric coating 205 may be within a range between, andincluding, any of the values noted above.

According to yet other embodiments, the dielectric coating 205 may havea particular dissipation factor (Df) as measured in the range between 28GHz, 80% RH. For example, the dielectric coating 205 may have adissipation factor of not greater than about 0.005, such as, not greaterthan about 0.004 or not greater than about 0.003 or not greater thanabout 0.002 or not greater than about 0.0019 or not greater than about0.0018 or not greater than about 0.0017 or not greater than about 0.0016or not greater than about 0.0015 or not greater than about 0.0014. Itwill be appreciated that the dissipation factor of the dielectriccoating 205 may be any value between, and including, any of the valuesnoted above. It will be further appreciated that the dissipation factorof the dielectric coating 205 may be within a range between, andincluding, any of the values noted above.

According to yet other embodiments, the dielectric coating 205 may havea particular dissipation factor (Df) as measured in the range between 39GHz, 20% RH. For example, the dielectric coating 205 may have adissipation factor of not greater than about 0.005, such as, not greaterthan about 0.004 or not greater than about 0.003 or not greater thanabout 0.002 or not greater than about 0.0019 or not greater than about0.0018 or not greater than about 0.0017 or not greater than about 0.0016or not greater than about 0.0015 or not greater than about 0.0014. Itwill be appreciated that the dissipation factor of the dielectriccoating 205 may be any value between, and including, any of the valuesnoted above. It will be further appreciated that the dissipation factorof the dielectric coating 205 may be within a range between, andincluding, any of the values noted above.

According to yet other embodiments, the dielectric coating 205 may havea particular dissipation factor (Df) as measured in the range between 39GHz, 80% RH. For example, the dielectric coating 205 may have adissipation factor of not greater than about 0.005, such as, not greaterthan about 0.004 or not greater than about 0.003 or not greater thanabout 0.002 or not greater than about 0.0019 or not greater than about0.0018 or not greater than about 0.0017 or not greater than about 0.0016or not greater than about 0.0015 or not greater than about 0.0014. Itwill be appreciated that the dissipation factor of the dielectriccoating 205 may be any value between, and including, any of the valuesnoted above. It will be further appreciated that the dissipation factorof the dielectric coating 205 may be within a range between, andincluding, any of the values noted above.

According to yet other embodiments, the dielectric coating 205 may havea particular dissipation factor (Df) as measured in the range between76-81 GHz, 20% RH. For example, the dielectric coating 205 may have adissipation factor of not greater than about 0.005, such as, not greaterthan about 0.004 or not greater than about 0.003 or not greater thanabout 0.002 or not greater than about 0.0019 or not greater than about0.0018 or not greater than about 0.0017 or not greater than about 0.0016or not greater than about 0.0015 or not greater than about 0.0014. Itwill be appreciated that the dissipation factor of the dielectriccoating 205 may be any value between, and including, any of the valuesnoted above. It will be further appreciated that the dissipation factorof the dielectric coating 205 may be within a range between, andincluding, any of the values noted above.

According to yet other embodiments, the dielectric coating 205 may havea particular dissipation factor (Df) as measured in the range between76-81 GHz, 80% RH. For example, the dielectric coating 205 may have adissipation factor of not greater than about 0.005, such as, not greaterthan about 0.004 or not greater than about 0.003 or not greater thanabout 0.002 or not greater than about 0.0019 or not greater than about0.0018 or not greater than about 0.0017 or not greater than about 0.0016or not greater than about 0.0015 or not greater than about 0.0014. Itwill be appreciated that the dissipation factor of the dielectriccoating 205 may be any value between, and including, any of the valuesnoted above. It will be further appreciated that the dissipation factorof the dielectric coating 205 may be within a range between, andincluding, any of the values noted above. According to yet otherembodiments, the dielectric coating 205 may have a particularcoefficient of thermal expansion as measured according to IPC-TM-6502.4.24 Rev. C Glass Transition Temperature and Z-Axis Thermal Expansionby TMA. For example, the dielectric coating 205 may have a coefficientof thermal expansion of not greater than about 80 ppm/° C.

According to yet other embodiments, the copper-clad laminate 201 mayhave a particular coefficient of thermal expansion as measured accordingto IPC-TM-650 2.4.24 Rev. C Glass Transition Temperature and Z-AxisThermal Expansion by TMA. For example, the copper-clad laminate 201 mayhave a coefficient of thermal expansion of not greater than about 45ppm/° C.

It will be appreciated that any copper-clad laminate described hereinmay include additional polymer based layers between the coating and anycopper foil layer of the copper-clad laminate. As also noted herein, theadditional polymer based layers may include filler (i.e. be filledpolymer layers) as described herein or may not include fillers (i.e. beunfilled polymer layers).

Referring next to a method of forming a printed circuit board, FIG. 3includes a diagram showing a forming method 300 for forming a printedcircuit board according to embodiments described herein. According toparticular embodiments, the forming method 300 may include a first step310 of providing a copper foil layer, a second step 320 applying afluoropolymer based adhesive layer overlying the copper foil layer, athird step 330 of combining a resin matrix precursor component and aceramic filler precursor component to form a forming mixture, a fourthstep 340 of forming the forming mixture into a dielectric coatingoverlying the copper foil layer to form a copper-clad laminate, and afifth step 350 of forming the copper-clad laminate into a printedcircuit board.

It will be appreciated that all description, details and characteristicsprovided herein in reference to forming method 100 may further apply toor describe correspond aspects of forming method 300.

Referring now to embodiments of the printed circuit board formedaccording to forming method 300, FIG. 4 includes diagram of a printedcircuit board 400. As shown in FIG. 4, the printed circuit board 400 mayinclude a copper-clad laminate 401, which may include a copper foillayer 402, a fluoropolymer based adhesive layer 403 overlying the copperfoil layer 402, and a dielectric coating 405 overlying a surface of thefluoropolymer based adhesive layer 403. According to certainembodiments, the dielectric coating 405 may include a resin matrixcomponent 410 and a ceramic filler component 420.

Again, it will be appreciated that all description provided herein inreference to dielectric coating 205 and/or copper-clad laminate 200 mayfurther apply to correcting aspects of the printed circuit board 200,including all components of printed circuit board 400.

Many different aspects and embodiments are possible. Some of thoseaspects and embodiments are described herein. After reading thisspecification, skilled artisans will appreciate that those aspects andembodiments are only illustrative and do not limit the scope of thepresent invention. Embodiments may be in accordance with any one or moreof the embodiments as listed below.

Embodiment 1. A copper-clad laminate comprising: a copper foil layer, afluoropolymer based adhesive layer overlying the copper foil layer, anda dielectric coating overlying the fluoropolymer based adhesive layer,wherein the dielectric coating comprises: a resin matrix component; anda ceramic filler component, wherein the ceramic filler componentcomprises a first filler material, and wherein the dielectric coatinghas an average thickness of not greater than about 20 microns.

Embodiment 2. A copper-clad laminate comprising: a copper foil layer, afluoropolymer based adhesive layer overlying the copper foil layer, anda dielectric coating overlying the fluoropolymer based adhesive layer,wherein the dielectric coating comprises: a resin matrix component; anda ceramic filler component, wherein the ceramic filler componentcomprises a first filler material, and wherein a particle sizedistribution of the first filler material comprises: a D10 of at leastabout 0.2 microns and not greater than about 1.6, a D50 of at leastabout 0.5 microns and not greater than about 2.7 microns, and a D90 ofat least about 0.8 microns and not greater than about 4.7 microns.

Embodiment 3. A copper-clad laminate comprising: a copper foil layer, afluoropolymer based adhesive layer overlying the copper foil layer, anda dielectric coating overlying the fluoropolymer based adhesive layer,wherein the dielectric coating comprises: a resin matrix component; anda ceramic filler component, wherein the ceramic filler componentcomprises a first filler material, and wherein the first filler materialfurther comprises a mean particle size of at not greater than about 5microns, and a particle size distribution span (PSDS) of not greaterthan about 5, where PSDS is equal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equalto a D₉₀ particle size distribution measurement of the first fillermaterial, D₁₀ is equal to a D₁₀ particle size distribution measurementof the first filler material, and D₅₀ is equal to a D₅₀ particle sizedistribution measurement of the first filler material.

Embodiment 4. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the fluoropolymer based adhesive layer has an averagethickness of at least about 0.2 microns.

Embodiment 5. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the fluoropolymer based adhesive layer has an averagethickness of not greater than about 7 microns.

Embodiment 6. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the fluoropolymer based adhesive layer comprisesfluoropolymers (e.g., polytetrafluoroethylene (PTFE), modifiedpolytetrafluoroethylene (mPTFE), co- and terpolymers oftetrafluoroethylene such as fluorinated ethylene-propylene (FEP),perfluoroalkoxy polymer resin (PFA), and modified perfluoroalkoxypolymer resin (mPFA), and derivatives and blends thereof.

Embodiment 7. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the fluoropolymer based adhesive layer consists offluoropolymers (e.g., polytetrafluoroethylene (PTFE), modifiedpolytetrafluoroethylene (mPTFE), co- and terpolymers oftetrafluoroethylene such as fluorinated ethylene-propylene (FEP),perfluoroalkoxy polymer resin (PFA), and modified perfluoroalkoxypolymer resin (mPFA), and derivatives and blends thereof.

Embodiment 8. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the fluoropolymer based adhesive layer is a PFA layer.

Embodiment 9. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein a particle size distribution of the first filler materialcomprises a D10 of at least about 0.2 microns and not greater than about1.6.

Embodiment 10. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein a particle size distribution of the first filler materialcomprises a D50 of at least about 0.5 microns and not greater than about2.7 microns.

Embodiment 11. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein a particle size distribution of the first filler materialcomprises a D90 of at least about 0.8 microns and not greater than about4.7 microns.

Embodiment 12. The copper-clad laminate of embodiment 1, wherein thefirst filler material further comprises a mean particle size of at notgreater than about 10 microns.

Embodiment 13. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the first filler material comprises a mean particle sizeof not greater than about 10 microns.

Embodiment 14. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the first filler material comprises a particle sizedistribution span (PSDS) of not greater than about 5, where PSDS isequal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀ particle sizedistribution measurement of the first filler material, D₁₀ is equal to aD₁₀ particle size distribution measurement of the first filler material,and D₅₀ is equal to a D₅₀ particle size distribution measurement of thefirst filler material.

Embodiment 15. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the first filler material further comprises an averagesurface area of not greater than about 10 m²/g.

Embodiment 16. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the first filler material comprises a silica basedcompound.

Embodiment 17. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the first filler material comprises silica.

Embodiment 18. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the resin matrix comprises a perfluoropolymer.

Embodiment 19. The copper-clad laminate of embodiment 18, wherein theperfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE); acopolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

Embodiment 20. The copper-clad laminate of embodiment 18, wherein theperfluoropolymer comprises polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 21. The copper-clad laminate of embodiment 18, wherein theperfluoropolymer consists of polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 22. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the content of the resin matrix component is at leastabout 50 vol. % for a total volume of the dielectric coating.

Embodiment 23. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the content of the resin matrix component is not greaterthan about 63 vol. % for a total volume of the dielectric coating.

Embodiment 24. The copper-clad laminate of embodiment 18, wherein thecontent of the perfluoropolymer is at least about 50 vol. % for a totalvolume of the dielectric coating.

Embodiment 25. The copper-clad laminate of embodiment 18, wherein thecontent of the perfluoropolymer is not greater than about 63 vol. % fora total volume of the dielectric coating.

Embodiment 26. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the content of the ceramic filler component is at leastabout 30 vol. % for a total volume of the dielectric coating.

Embodiment 27. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the content of the ceramic filler component is notgreater than about 57 vol. % for a total volume of the dielectriccoating.

Embodiment 28. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the content of the first filler material is at leastabout 80 vol. % for a total volume of the ceramic filler component.

Embodiment 29. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the content of the first filler material is not greaterthan about 100 vol. % for a total volume of the ceramic fillercomponent.

Embodiment 30. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the ceramic filler component further comprises a secondfiller material.

Embodiment 31. The copper-clad laminate of embodiment 30, wherein thesecond filler material comprises a high dielectric constant ceramicmaterial.

Embodiment 32. The copper-clad laminate of embodiment 31, wherein thehigh dielectric constant ceramic material has a dielectric constant ofat least about 14.

Embodiment 33. The copper-clad laminate of embodiment 31, wherein theceramic filler component further comprises TiO₂, SrTiO₃, ZrTi₂O₆,MgTiO₃, CaTiO₃, BaTiO₄ or any combination thereof.

Embodiment 34. The copper-clad laminate of embodiment 30, wherein thecontent of the second filler material is at least about 1 vol. % for atotal volume of the ceramic filler component.

Embodiment 35. The copper-clad laminate of embodiment 30, wherein thecontent of the second filler material is not greater than about 20 vol.% for a total volume of the ceramic filler component.

Embodiment 36. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the ceramic filler component is at least about 97%amorphous.

Embodiment 37. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the dielectric coating comprises a porosity of notgreater than about 10 vol. %

Embodiment 38. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the copper-clad laminate comprises a porosity of notgreater than about 10 vol. %.

Embodiment 39. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the dielectric coating comprises an average thickness ofat least about 1 micron.

Embodiment 40. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the dielectric coating comprises an average thickness ofnot greater than about 20 microns.

Embodiment 41. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the dielectric coating comprises a dissipation factor (5GHz, 20% RH) of not greater than about 3.5.

Embodiment 42. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the dielectric coating comprises a dissipation factor (5GHz, 20% RH)) of not greater than about 0.001.

Embodiment 43. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the dielectric coating comprises a coefficient of thermalexpansion (all axes) of not greater than about 80 ppm/° C.

Embodiment 44. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the copper-clad laminate comprises a peel strengthbetween the copper foil layer and the dielectric coating of at leastabout 6 lb/in.

Embodiment 45. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the dielectric coating comprises a moisture absorption ofnot greater than about 0.05%.

Embodiment 46. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the copper foil layer comprises an average thickness ofat least about 6 microns.

Embodiment 47. The copper-clad laminate of any one of embodiments 1, 2,and 3, wherein the copper foil layer comprises an average thickness ofnot greater than about 36 microns.

Embodiment 48. A printed circuit board comprising a copper-cladlaminate, wherein the copper-clad laminate comprises: a copper foillayer, a fluoropolymer based adhesive layer overlying the copper foillayer, and a dielectric coating overlying the fluoropolymer basedadhesive layer, wherein the dielectric coating comprises: a resin matrixcomponent; and a ceramic filler component, wherein the ceramic fillercomponent comprises a first filler material, and wherein the dielectriccoating has an average thickness of not greater than 20 microns.

Embodiment 49. A printed circuit board comprising a copper-cladlaminate, wherein the copper-clad laminate comprises: a copper foillayer, a fluoropolymer based adhesive layer overlying the copper foillayer, and a dielectric coating overlying the fluoropolymer basedadhesive layer, wherein the dielectric coating comprises: a resin matrixcomponent; and a ceramic filler component, wherein the ceramic fillercomponent comprises a first filler material, and wherein a particle sizedistribution of the first filler material comprises: a D₁₀ of at leastabout 0.2 microns and not greater than about 1.6, a D₅₀ of at leastabout 0.5 microns and not greater than about 2.7 microns, and a D90 ofat least about 0.8 microns and not greater than about 4.7 microns.

Embodiment 50. A printed circuit board comprising a copper-cladlaminate, wherein the copper-clad laminate comprises: a copper foillayer a fluoropolymer based adhesive layer overlying the copper foillayer, and a dielectric coating overlying the fluoropolymer basedadhesive layer, wherein the dielectric coating comprises: a resin matrixcomponent; and a ceramic filler component, wherein the ceramic fillercomponent comprises a first filler material, and wherein the firstfiller material further comprises a mean particle size of at not greaterthan about 5 microns, and a particle size distribution span (PSDS) ofnot greater than about 5, where PSDS is equal to (D₉₀−D₁₀)/D₅₀, whereD₉₀ is equal to a D₉₀ particle size distribution measurement of thefirst filler material, D₁₀ is equal to a D₁₀ particle size distributionmeasurement of the first filler material, and D₅₀ is equal to a D₅₀particle size distribution measurement of the first filler material.

Embodiment 51. The printed circuit board of any one of embodiments 48,49 and 50, wherein the fluoropolymer based adhesive layer has an averagethickness of at least about 0.2 microns.

Embodiment 52. The printed circuit board of any one of embodiments 48,49 and 50, wherein the fluoropolymer based adhesive layer has an averagethickness of not greater than about 7 microns.

Embodiment 53. The printed circuit board of any one of embodiments 48,49 and 50, wherein the fluoropolymer based adhesive layer comprisesfluoropolymers (e.g., polytetrafluoroethylene (PTFE), modifiedpolytetrafluoroethylene (mPTFE), co- and terpolymers oftetrafluoroethylene such as fluorinated ethylene-propylene (FEP),perfluoroalkoxy polymer resin (PFA), and modified perfluoroalkoxypolymer resin (mPFA), and derivatives and blends thereof.

Embodiment 54. The printed circuit board of any one of embodiments 48,49 and 50, wherein the fluoropolymer based adhesive layer consists offluoropolymers (e.g., polytetrafluoroethylene (PTFE), modifiedpolytetrafluoroethylene (mPTFE), co- and terpolymers oftetrafluoroethylene such as fluorinated ethylene-propylene (FEP),perfluoroalkoxy polymer resin (PFA), and modified perfluoroalkoxypolymer resin (mPFA), and derivatives and blends thereof.

Embodiment 55. The printed circuit board of any one of embodiments 48,49 and 50, wherein the fluoropolymer based adhesive layer is a PFAlayer.

Embodiment 56. The printed circuit board of any one of embodiments 48,49 and 50, wherein a particle size distribution of the first fillermaterial comprises a D10 of at least about 0.2 microns and not greaterthan about 1.6.

Embodiment 57. The printed circuit board of any one of embodiments 48,49 and 50, wherein a particle size distribution of the first fillermaterial comprises a D50 of at least about 0.5 microns and not greaterthan about 2.7 microns.

Embodiment 58. The printed circuit board of any one of embodiments 48,49 and 50, wherein a particle size distribution of the first fillermaterial comprises a D90 of at least about 0.8 microns and not greaterthan about 4.7 microns.

Embodiment 59. The printed circuit board of any one of embodiments 48,49 and 50, wherein the first filler material further comprises a meanparticle size of at not greater than about 10 microns.

Embodiment 60. The printed circuit board of any one of embodiments 48,49 and 50, wherein the first filler material comprises a mean particlesize of not greater than about 10 microns.

Embodiment 61. The printed circuit board of any one of embodiments 48,49 and 50, wherein the first filler material comprises a particle sizedistribution span (PSDS) of not greater than about 5, where PSDS isequal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀ particle sizedistribution measurement of the first filler material, D₁₀ is equal to aD₁₀ particle size distribution measurement of the first filler material,and D₅₀ is equal to a D₅₀ particle size distribution measurement of thefirst filler material.

Embodiment 62. The printed circuit board of any one of embodiments 48,49 and 50, wherein the first filler material further comprises anaverage surface area of not greater than about 10 m²/g.

Embodiment 63. The printed circuit board of any one of embodiments 48,49 and 50, wherein the first filler material comprises a silica basedcompound.

Embodiment 64. The printed circuit board of any one of embodiments 48,49 and 50, wherein the first filler material comprises silica.

Embodiment 65. The printed circuit board of any one of embodiments 48,49 and 50, wherein the resin matrix comprises a perfluoropolymer.

Embodiment 66. The printed circuit board of embodiment 65, wherein theperfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE); acopolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

Embodiment 67. The printed circuit board of embodiment 65, wherein theperfluoropolymer comprises polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 68. The printed circuit board of embodiment 65, wherein theperfluoropolymer consists of polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 69. The printed circuit board of any one of embodiments 48,49 and 50, wherein the content of the resin matrix component is at leastabout 50 vol. % for a total volume of the dielectric coating.

Embodiment 70. The printed circuit board of any one of embodiments 48,49 and 50, wherein the content of the resin matrix component is notgreater than about 63 vol. % for a total volume of the dielectriccoating.

Embodiment 71. The printed circuit board of embodiment 65, wherein thecontent of the perfluoropolymer is at least about 50 vol. % for a totalvolume of the dielectric coating.

Embodiment 72. The printed circuit board of embodiment 65, wherein thecontent of the perfluoropolymer is not greater than about 63 vol. % fora total volume of the dielectric coating.

Embodiment 73. The printed circuit board of any one of embodiments 48,49 and 50, wherein the content of the ceramic filler component is atleast about 50 vol. % for a total volume of the dielectric coating.

Embodiment 74. The printed circuit board of any one of embodiments 48,49 and 50, wherein the content of the ceramic filler component is notgreater than about 57 vol. % for a total volume of the dielectriccoating.

Embodiment 75. The printed circuit board of any one of embodiments 48,49 and 50, wherein the content of the first filler material is at leastabout 80 vol. % for a total volume of the ceramic filler component.

Embodiment 76. The printed circuit board of any one of embodiments 48,49 and 50, wherein the content of the first filler material is notgreater than about 100 vol. % for a total volume of the ceramic fillercomponent.

Embodiment 77. The printed circuit board of any one of embodiments 48,49 and 50, wherein the ceramic filler component further comprises asecond filler material.

Embodiment 78. The printed circuit board of embodiment 77, wherein thesecond filler material comprises a high dielectric constant ceramicmaterial.

Embodiment 79. The printed circuit board of embodiment 78, wherein thehigh dielectric constant ceramic material has a dielectric constant ofat least about 14.

Embodiment 80. The printed circuit board of embodiment 78, wherein theceramic filler component further comprises TiO₂, SrTiO₃, ZrTi₂O₆,MgTiO₃, CaTiO₃, BaTiO₄ or any combination thereof.

Embodiment 81. The printed circuit board of embodiment 77, wherein thecontent of the second filler material is at least about 1 vol. % for atotal volume of the ceramic filler component.

Embodiment 82. The printed circuit board of embodiment 77, wherein thecontent of the second filler material is not greater than about 20 vol.% for a total volume of the ceramic filler component.

Embodiment 83. The printed circuit board of any one of embodiments 48,49 and 50, wherein the ceramic filler component is at least about 97%amorphous.

Embodiment 84. The printed circuit board of any one of embodiments 48,49 and 50, wherein the dielectric coating comprises a porosity of notgreater than about 10 vol. %

Embodiment 85. The printed circuit board of any one of embodiments 48,49 and 50, wherein the copper-clad laminate comprises a porosity of notgreater than about 10 vol. %.

Embodiment 86. The printed circuit board of any one of embodiments 48,49 and 50, wherein the dielectric coating comprises an average thicknessof at least about 1 micron.

Embodiment 87. The printed circuit board of any one of embodiments 48,49 and 50, wherein the dielectric coating comprises an average thicknessof not greater than about 20 microns.

Embodiment 88. The printed circuit board of any one of embodiments 48,49 and 50, wherein the dielectric coating comprises a dissipation factor(5 GHz, 20% RH) of not greater than about 0.005.

Embodiment 89. The printed circuit board of any one of embodiments 48,49 and 50, wherein the dielectric coating comprises a dissipation factor(5 GHz, 20% RH)) of not greater than about 0.0014.

Embodiment 90. The printed circuit board of any one of embodiments 48,49 and 50, wherein the dielectric coating comprises a coefficient ofthermal expansion (all axes) of not greater than about 80 ppm/° C.

Embodiment 91. The printed circuit board of any one of embodiments 48,49 and 50, wherein the copper-clad laminate comprises a peel strengthbetween the copper foil layer and the dielectric coating of at leastabout 6 lb/in.

Embodiment 92. The printed circuit board of any one of embodiments 48,49 and 50, wherein the dielectric coating comprises a moistureabsorption of not greater than about 0.05%.

Embodiment 93. The printed circuit board of any one of embodiments 48,49 and 50, wherein the copper foil layer comprises an average thicknessof at least about 6 microns.

Embodiment 94. The printed circuit board of any one of embodiments 48,49 and 50, wherein the copper foil layer comprises an average thicknessof not greater than about 36 microns.

Embodiment 95. A method of forming a copper-clad laminate, wherein themethod comprises: providing a copper foil layer, applying afluoropolymer based adhesive layer overlying the copper foil layer,combining a resin matrix precursor component and a ceramic fillerprecursor component to form a forming mixture, forming the formingmixture into a dielectric coating overlying the fluoropolymer basedadhesive layer, wherein the dielectric coating has an average thicknessof not greater than about 20 microns.

Embodiment 96. A method of forming a copper-clad laminate, wherein themethod comprises: providing a copper foil layer, applying afluoropolymer based adhesive layer overlying the copper foil layer,combining a resin matrix precursor component and a ceramic fillerprecursor component to form a forming mixture, forming the formingmixture into a dielectric coating overlying the fluoropolymer basedadhesive layer, wherein the ceramic filler precursor component comprisesa first filler precursor material, and wherein a particle sizedistribution of the first filler precursor material comprises: a D10 ofat least about 0.2 microns and not greater than about 1.6, a D50 of atleast about 0.5 microns and not greater than about 2.7 microns, and aD90 of at least about 0.8 microns and not greater than about 4.7microns.

Embodiment 97. A method of forming a copper-clad laminate, wherein themethod comprises: providing a copper foil layer, applying afluoropolymer based adhesive layer overlying the copper foil layer,combining a resin matrix precursor component and a ceramic fillerprecursor component to form a forming mixture, forming the formingmixture into a dielectric coating overlying the fluoropolymer basedadhesive layer, wherein the ceramic filler precursor component comprisesa first filler precursor material, and wherein the first fillerprecursor material further comprises a mean particle size of at notgreater than about 5 microns, and a particle size distribution span(PSDS) of not greater than about 5, where PSDS is equal to(D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀ particle size distributionmeasurement of the first filler precursor material, D₁₀ is equal to aD₁₀ particle size distribution measurement of the first filler precursormaterial, and D₅₀ is equal to a D₅₀ particle size distributionmeasurement of the first filler precursor material.

Embodiment 98. The method of any one of embodiments 95, 96, and 97,wherein the fluoropolymer based adhesive layer has an average thicknessof at least about 0.2 microns.

Embodiment 99. The method of any one of embodiments 95, 96, and 97,wherein the fluoropolymer based adhesive layer has an average thicknessof not greater than about 7 microns.

Embodiment 100. The method of any one of embodiments 95, 96, and 97,wherein the fluoropolymer based adhesive layer comprises fluoropolymers(e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene(mPTFE), co- and terpolymers of tetrafluoroethylene such as fluorinatedethylene-propylene (FEP), perfluoroalkoxy polymer resin (PFA), andmodified perfluoroalkoxy polymer resin (mPFA), and derivatives andblends thereof.

Embodiment 101. The method of any one of embodiments 95, 96, and 97,wherein the fluoropolymer based adhesive layer consists offluoropolymers (e.g., polytetrafluoroethylene (PTFE), modifiedpolytetrafluoroethylene (mPTFE), co- and terpolymers oftetrafluoroethylene such as fluorinated ethylene-propylene (FEP),perfluoroalkoxy polymer resin (PFA), and modified perfluoroalkoxypolymer resin (mPFA), and derivatives and blends thereof.

Embodiment 102. The method of any one of embodiments 95, 96, and 97,wherein the fluoropolymer based adhesive layer is a PFA layer.

Embodiment 103. The method of any one of embodiments 95, 96, and 97,wherein a particle size distribution of the first filler precursormaterial comprises a D10 of at least about 0.2 microns and not greaterthan about 1.6.

Embodiment 104. The method of any one of embodiments 95, 96, and 97,wherein a particle size distribution of the first filler precursormaterial comprises a D50 of at least about 0.5 microns and not greaterthan about 2.7 microns.

Embodiment 105. The method of any one of embodiments 95, 96, and 97,wherein a particle size distribution of the first filler precursormaterial comprises a D90 of at least about 0.8 microns and not greaterthan about 4.7 microns.

Embodiment 106. The method of embodiment 95, wherein the first fillerprecursor material further comprises a mean particle size of at notgreater than about 10 microns.

Embodiment 107. The method of any one of embodiments 95, 96, and 97,wherein the first filler precursor material comprises a mean particlesize of not greater than about 10 microns.

Embodiment 108. The method of any one of embodiments 95, 96, and 97,wherein the first filler precursor material comprises a particle sizedistribution span (PSDS) of not greater than about 5, where PSDS isequal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀ particle sizedistribution measurement of the first filler precursor material, D₁₀ isequal to a D₁₀ particle size distribution measurement of the firstfiller precursor material, and D₅₀ is equal to a D₅₀ particle sizedistribution measurement of the first filler precursor material.

Embodiment 109. The method of any one of embodiments 95, 96, and 97,wherein the first filler precursor material further comprises an averagesurface area of not greater than about 10 m²/g.

Embodiment 110. The method of any one of embodiments 95, 96, and 97,wherein the first filler precursor material comprises a silica basedcompound.

Embodiment 111. The method of any one of embodiments 95, 96, and 97, thefirst filler precursor material comprises silica.

Embodiment 112. The method of any one of embodiments 95, 96, and 97,wherein the resin matrix precursor component comprises aperfluoropolymer.

Embodiment 113. The method of embodiment 112, wherein theperfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE); acopolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

Embodiment 114. The method of embodiment 112, wherein theperfluoropolymer comprises polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 115. The method of embodiment 112, wherein theperfluoropolymer consists of polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 116. The method of any one of embodiments 95, 96, and 97,wherein the content of the resin matrix precursor component is at leastabout 50 vol. % for a total volume of the dielectric coating.

Embodiment 117. The method of any one of embodiments 95, 96, and 97,wherein the content of the resin matrix precursor component is notgreater than about 63 vol. % for a total volume of the dielectriccoating.

Embodiment 118. The method of embodiment 112, wherein the content of theperfluoropolymer is at least about 50 vol. % for a total volume of thedielectric coating.

Embodiment 119. The method of embodiment 112, wherein the content of theperfluoropolymer is not greater than about 63 vol. % for a total volumeof the dielectric coating.

Embodiment 120. The method of any one of embodiments 95, 96, and 97,wherein the content of the ceramic filler precursor component is atleast about 50 vol. % for a total volume of the dielectric coating.

Embodiment 121. The method of any one of embodiments 95, 96, and 97,wherein the content of the ceramic filler precursor component is notgreater than about 57 vol. % for a total volume of the dielectriccoating.

Embodiment 122. The method of any one of embodiments 95, 96, and 97,wherein the content of the first filler precursor material is at leastabout 80 vol. % for a total volume of the ceramic filler precursorcomponent.

Embodiment 123. The method of any one of embodiments 95, 96, and 97,wherein the content of the first filler precursor material is notgreater than about 100 vol. % for a total volume of the ceramic fillerprecursor component.

Embodiment 124. The method of any one of embodiments 95, 96, and 97,wherein the ceramic filler precursor component further comprises asecond filler precursor material.

Embodiment 125. The method of embodiment 124, wherein the second fillerprecursor material comprises a high dielectric constant ceramicmaterial.

Embodiment 126. The method of embodiment 125, wherein the highdielectric constant ceramic material has a dielectric constant of atleast about 14.

Embodiment 127. The method of embodiment 125, wherein the ceramic fillerprecursor component further comprises TiO₂, SrTiO₃, ZrTi₂O₆, MgTiO₃,CaTiO₃, BaTiO₄ or any combination thereof.

Embodiment 128. The method of embodiment 124, wherein the content of thesecond filler precursor material is at least about 1 vol. % for a totalvolume of the ceramic filler precursor component.

Embodiment 129. The method of embodiment 124, wherein the content of thesecond filler precursor material is not greater than about 20 vol. % fora total volume of the ceramic filler precursor component.

Embodiment 130. The method of any one of embodiments 95, 96, and 97,wherein the ceramic filler precursor component is at least about 97%amorphous.

Embodiment 131. The method of any one of embodiments 95, 96, and 97,wherein the dielectric coating comprises a porosity of not greater thanabout 10 vol. %

Embodiment 132. The method of any one of embodiments 95, 96, and 97,wherein the copper-clad laminate comprises a porosity of not greaterthan about 10 vol. %.

Embodiment 133. The method of any one of embodiments 95, 96, and 97,wherein the dielectric coating comprises an average thickness of atleast about 1 micron.

Embodiment 134. The method of any one of embodiments 95, 96, and 97,wherein the dielectric coating comprises an average thickness of notgreater than about 20 microns.

Embodiment 135. The method of any one of embodiments 95, 96, and 97,wherein the dielectric coating comprises a dissipation factor (5 GHz,20% RH) of not greater than about 0.005.

Embodiment 136. The method of any one of embodiments 95, 96, and 97,wherein the dielectric coating comprises a dissipation factor (5 GHz,20% RH)) of not greater than about 0.0014.

Embodiment 137. The method of any one of embodiments 95, 96, and 97,wherein the dielectric coating comprises a coefficient of thermalexpansion (all axes) of not greater than about 80 ppm/° C.

Embodiment 138. The method of any one of embodiments 95, 96, and 97,wherein the copper-clad laminate comprises a peel strength between thecopper foil layer and the dielectric coating of at least about 6 lb/in.

Embodiment 139. The method of any one of embodiments 95, 96, and 97,wherein the dielectric coating comprises a moisture absorption of notgreater than about 0.05%.

Embodiment 140. The method of any one of embodiments 95, 96, and 97,wherein the copper foil layer comprises an average thickness of at leastabout 6 microns.

Embodiment 141. The method of any one of embodiments 95, 96, and 97,wherein the copper foil layer comprises an average thickness of notgreater than about 36 microns.

Embodiment 142. A method of forming a printed circuit board, wherein themethod comprises: providing a copper foil layer, applying afluoropolymer based adhesive layer overlying the copper foil layer,combining a resin matrix precursor component and a ceramic fillerprecursor component to form a forming mixture, forming the formingmixture into a dielectric coating overlying the fluoropolymer basedadhesive layer, wherein the dielectric coating has an average thicknessof not greater than about 20 microns.

Embodiment 143. A method of forming a printed circuit board, wherein themethod comprises: providing a copper foil layer, applying afluoropolymer based adhesive layer overlying the copper foil layer,combining a resin matrix precursor component and a ceramic fillerprecursor component to form a forming mixture, forming the formingmixture into a dielectric coating overlying the fluoropolymer basedadhesive layer, wherein the ceramic filler precursor component comprisesa first filler precursor material, and wherein a particle sizedistribution of the first filler precursor material comprises: a D10 ofat least about 0.2 microns and not greater than about 1.6, a D50 of atleast about 0.5 microns and not greater than about 2.7 microns, and aD90 of at least about 0.8 microns and not greater than about 4.7microns.

Embodiment 144. A method of forming a printed circuit board, wherein themethod comprises: providing a copper foil layer, applying afluoropolymer based adhesive layer overlying the copper foil layer,combining a resin matrix precursor component and a ceramic fillerprecursor component to form a forming mixture, forming the formingmixture into a dielectric coating overlying the fluoropolymer basedadhesive layer, wherein the ceramic filler precursor component comprisesa first filler precursor material, and wherein the first fillerprecursor material further comprises a mean particle size of at notgreater than about 5 microns, and a particle size distribution span(PSDS) of not greater than about 5, where PSDS is equal to(D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀ particle size distributionmeasurement of the first filler precursor material, D₁₀ is equal to aD₁₀ particle size distribution measurement of the first filler precursormaterial, and D₅₀ is equal to a D₅₀ particle size distributionmeasurement of the first filler precursor material.

Embodiment 145. The method of any one of embodiments 142, 143, and 144,wherein the fluoropolymer based adhesive layer has an average thicknessof at least about 0.2 microns.

Embodiment 146. The method of any one of embodiments 142, 143, and 144,wherein the fluoropolymer based adhesive layer has an average thicknessof not greater than about 7 microns.

Embodiment 147. The method of any one of embodiments 142, 143, and 144,wherein the fluoropolymer based adhesive layer comprises fluoropolymers(e.g., polytetrafluoroethylene (PTFE), modified polytetrafluoroethylene(mPTFE), co- and terpolymers of tetrafluoroethylene such as fluorinatedethylene-propylene (FEP), perfluoroalkoxy polymer resin (PFA), andmodified perfluoroalkoxy polymer resin (mPFA), and derivatives andblends thereof.

Embodiment 148. The method of any one of embodiments 142, 143, and 144,wherein the fluoropolymer based adhesive layer consists offluoropolymers (e.g., polytetrafluoroethylene (PTFE), modifiedpolytetrafluoroethylene (mPTFE), co- and terpolymers oftetrafluoroethylene such as fluorinated ethylene-propylene (FEP),perfluoroalkoxy polymer resin (PFA), and modified perfluoroalkoxypolymer resin (mPFA), and derivatives and blends thereof.

Embodiment 149. The method of any one of embodiments 142, 143, and 144,wherein the fluoropolymer based adhesive layer is a PFA layer.

Embodiment 150. The method of any one of embodiments 142, 143, and 144,wherein a particle size distribution of the first filler precursormaterial comprises a D10 of at least about 0.2 microns and not greaterthan about 1.6.

Embodiment 151. The method of any one of embodiments 142, 143, and 144,wherein a particle size distribution of the first filler precursormaterial comprises a D50 of at least about 0.5 microns and not greaterthan about 2.7 microns.

Embodiment 152. The method of any one of embodiments 142, 143, and 144,wherein a particle size distribution of the first filler precursormaterial comprises a D90 of at least about 0.8 microns and not greaterthan about 4.7 microns.

Embodiment 153. The method of embodiment 152, wherein the first fillerprecursor material further comprises a mean particle size of at notgreater than about 10 microns.

Embodiment 154. The method of any one of embodiments 142, 143, and 144,wherein the first filler precursor material comprises a mean particlesize of not greater than about 10 microns.

Embodiment 155. The method of any one of embodiments 142, 143, and 144,wherein the first filler precursor material comprises a particle sizedistribution span (PSDS) of not greater than about 5, where PSDS isequal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀ particle sizedistribution measurement of the first filler precursor material, D₁₀ isequal to a D₁₀ particle size distribution measurement of the firstfiller precursor material, and D₅₀ is equal to a D₅₀ particle sizedistribution measurement of the first filler precursor material.

Embodiment 156. The method of any one of embodiments 142, 143, and 144,wherein the first filler precursor material further comprises an averagesurface area of not greater than about 10 m²/g.

Embodiment 157. The method of any one of embodiments 142, 143, and 144,wherein the first filler precursor material comprises a silica basedcompound.

Embodiment 158. The method of any one of embodiments 142, 143, and 144,the first filler precursor material comprises silica.

Embodiment 159. The method of any one of embodiments 142, 143, and 144,wherein the resin matrix precursor component comprises aperfluoropolymer.

Embodiment 160. The method of embodiment 159, wherein theperfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE); acopolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

Embodiment 161. The method of embodiment 159, wherein theperfluoropolymer comprises polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 162. The method of embodiment 159, wherein theperfluoropolymer consists of polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 163. The method of any one of embodiments 142, 143, and 144,wherein the content of the resin matrix precursor component is at leastabout 50 vol. % for a total volume of the dielectric coating.

Embodiment 164. The method of any one of embodiments 142, 143, and 144,wherein the content of the resin matrix precursor component is notgreater than about 63 vol. % for a total volume of the dielectriccoating.

Embodiment 165. The method of embodiment 159, wherein the content of theperfluoropolymer is at least about 50 vol. % for a total volume of thedielectric coating.

Embodiment 166. The method of embodiment 159, wherein the content of theperfluoropolymer is not greater than about 63 vol. % for a total volumeof the dielectric coating.

Embodiment 167. The method of any one of embodiments 142, 143, and 144,wherein the content of the ceramic filler precursor component is atleast about 30 vol. % for a total volume of the dielectric coating.

Embodiment 168. The method of any one of embodiments 142, 143, and 144,wherein the content of the ceramic filler precursor component is notgreater than about 57 vol. % for a total volume of the dielectriccoating.

Embodiment 169. The method of any one of embodiments 142, 143, and 144,wherein the content of the first filler precursor material is at leastabout 80 vol. % for a total volume of the ceramic filler precursorcomponent.

Embodiment 170. The method of any one of embodiments 142, 143, and 144,wherein the content of the first filler precursor material is notgreater than about 100 vol. % for a total volume of the ceramic fillerprecursor component.

Embodiment 171. The method of any one of embodiments 142, 143, and 144,wherein the ceramic filler precursor component further comprises asecond filler precursor material.

Embodiment 172. The dielectric coating of embodiment 171, wherein thesecond filler precursor material comprises a high dielectric constantceramic material.

Embodiment 173. The dielectric coating of embodiment 172, wherein thehigh dielectric constant ceramic material has a dielectric constant ofat least about 14.

Embodiment 174. The dielectric coating of embodiment 172, wherein theceramic filler precursor component further comprises TiO₂, SrTiO₃,ZrTi₂O₆, MgTiO₃, CaTiO₃, BaTiO₄ or any combination thereof.

Embodiment 175. The method of embodiment 171, wherein the content of thesecond filler precursor material is at least about 1 vol. % for a totalvolume of the ceramic filler precursor component.

Embodiment 176. The method of embodiment 171, wherein the content of thesecond filler precursor material is not greater than about 20 vol. % fora total volume of the ceramic filler precursor component.

Embodiment 177. The method of any one of embodiments 142, 143, and 144,wherein the ceramic filler precursor component is at least about 97%amorphous.

Embodiment 178. The method of any one of embodiments 142, 143, and 144,wherein the dielectric coating comprises a porosity of not greater thanabout 10 vol. %

Embodiment 179. The method of any one of embodiments 142, 143, and 144,wherein the copper-clad laminate comprises a porosity of not greaterthan about 10 vol. %.

Embodiment 180. The method of any one of embodiments 142, 143, and 144,wherein the dielectric coating comprises an average thickness of atleast about 1 micron.

Embodiment 181. The method of any one of embodiments 142, 143, and 144,wherein the dielectric coating comprises an average thickness of notgreater than about 20 microns.

Embodiment 182. The method of any one of embodiments 142, 143, and 144,wherein the dielectric coating comprises a dissipation factor (5 GHz,20% RH) of not greater than about 0.005.

Embodiment 183. The method of any one of embodiments 142, 143, and 144,wherein the dielectric coating comprises a dissipation factor (5 GHz,20% RH)) of not greater than about 0.0014.

Embodiment 184. The method of any one of embodiments 142, 143, and 144,wherein the dielectric coating comprises a coefficient of thermalexpansion (all axes) of not greater than about 80 ppm/° C.

Embodiment 185. The method of any one of embodiments 142, 143, and 144,wherein the copper-clad laminate comprises a peel strength between thecopper foil layer and the dielectric coating of at least about 6 lb/in.

Embodiment 186. The method of any one of embodiments 142, 143, and 144,wherein the dielectric coating comprises a moisture absorption of notgreater than about 0.05%.

Embodiment 187. The method of any one of embodiments 142, 143, and 144,wherein the copper foil layer comprises an average thickness of at leastabout 6 microns.

Embodiment 188. The method of any one of embodiments 142, 143, and 144,wherein the copper foil layer comprises an average thickness of notgreater than about 36 microns.

EXAMPLES

The concepts described herein will be further described in the followingExamples, which do not limit the scope of the invention described in theclaims.

Example 1

Sample dielectric substrates S1-S12 were configured and formed accordingto certain embodiments described herein.

Each sample dielectric substrate was formed using a cast film processwhere a fluoropolymer pre-treated polyimide carrier belt is passedthrough a dip pan containing an aqueous forming mixture (i.e. thecombination of the resin matrix component and the ceramic fillercomponent) at the base of the coating tower. The coated carrier beltthen passes through a metering zone in which metering bars remove excessdispersion from the coated carrier belt. After the metering zone, thecoated carrier belt passes into a drying zone maintained at atemperature between 82° C. and 121° C. to evaporate the water. Thecoated carrier belt with the dried film then passes through a bake zonemaintained at a temperature between 315° C. and 343° C. Finally, thecarrier belt passes through a fusing zone maintained at a temperaturebetween 349° C. and 399° C. to sinter, i.e. coalesce, the resin matrixmaterial. The coated carrier belt then passes through a cooling plenumfrom which it can be directed either to a subsequent dip pan to beginformation of a further layer of the film or to a stripping apparatus.When the desired film thickness is achieved, the films are stripped offof the carrier belt.

The resin matrix component for each sample dielectric substrates S1-S12is polytetrafluoroethylene (PTFE). Further configuration and compositiondetails of each dielectric substrate S1-S12 are summarized in Table 1below.

TABLE 1 Sample Dielectric Substrate Configuration and CompositionDielectric Substrate Composition First Filler Second Material- CeramicSilica Filler Ceramic Resin Based Material Filler Matrix Component(TiO₂) Component Component (vol. % of (vol. % of Sample Silica Based(vol. % of (vol. % of Ceramic Ceramic Sample Thickness Componentdielectric dielectric Filler Filler No. (mil) Type substrate) substrate)Component) Component) S1  5 A 54.4 45.6 96.1  3.9 S2  5 A 54.4 45.696.1  3.9 S3  5 A 54.4 45.6 96.1  3.9 S4  3 A 54.4 45.6 96.1  3.9 S5  4A 54.4 45.6 100.00  0.0 S6  4 A 54.4 45.6 100.0  0.0 S7  4 A 54.4 45.6100.0  0.0 S8  4 A 54.4 45.6 100.0  0.0 S9  2 A 55.0 45.0 100.0  0.0 S102 B 54.4 45.6 100.0  0.0 S11 4 A 48.0 52.0 100.0  0.0 S12 4 A 48.0 52.0100.0  0.0

D

D₅

D₉

Silica Based (D₉₀-

Component D₁₀ D₅₀ D₉₀ D₁₀)/

Type

D₅₀

of thermal expansion of the sample dielectric substrate (“CTE”).

TABLE 3 Performance Properties Sample Dk Df (5 GHz, Df (5 GHz, CTE No.(5 GHz) 20% RH) 80% RH) (ppm/° C.) S1  3.02 0.0005 0.0006 29 S2  3.000.0005 0.0007 28 S3  3.02 0.0005 0.0006 25 S4  2.95 0.0004 0.0006 20 S5 2.76 0.0004 0.0005 29 S6  2.78 0.0004 0.0005 19 S7  2.73 0.0005 0.000626 S8  2.75 0.0004 0.0006 31 S9  2.78 0.0005 0.0006 30 S10 2.70 0.00070.0010 34 S11 2.68 0.0005 0.0006 54 S12 2.72 0.0004 0.0007 58

Example 2

For purposes of comparison, comparative sample dielectric substratesCS1-CS10 were configured and formed.

Each comparative sample dielectric substrate was formed using a castfilm process where a fluoropolymer pre-treated polyimide carrier belt ispassed through a dip pan containing an aqueous forming mixture (i.e. thecombination of the resin matrix component and the ceramic fillercomponent) at the base of the coating tower. The coated carrier beltthen passes through a metering zone in which metering bars remove excessdispersion from the coated carrier belt. After the metering zone, thecoated carrier belt passes into a drying zone maintained at atemperature between 82° C. and 121° C. to evaporate the water. Thecoated carrier belt with the dried film then passes through a bake zonemaintained at a temperature between 315° C. and 343° C. Finally, thecarrier belt passes through a fusing zone maintained at a temperaturebetween 349° C. and 399° C. to sinter, i.e. coalesce, the resin matrixmaterial. The coated carrier belt then passes through a cooling plenumfrom which it can be directed either to a subsequent dip pan to beginformation of a further layer of the film or to a stripping apparatus.When the desired film thickness is achieved, the films are stripped offof the carrier belt.

The resin matrix component for each comparative sample dielectricsubstrates CS1-CS10 is polytetrafluoroethylene (PTFE). Furtherconfiguration and composition details of each dielectric substrateCS1-CS10 are summarized in Table 4 below.

TABLE 4 Comparative Sample Dielectric Substrate Configuration andComposition Dielectric Substrate Composition First Filler SecondMaterial- Ceramic Silica Filler Ceramic Resin Based Material FillerMatrix Component (TiO₂) Component Component (vol. % of (vol. % of SampleSilica Based (vol. % of (vol. % of Ceramic Ceramic Sample ThicknessComponent dielectric dielectric Filler Filler No. (mil) Type substrate)substrate) Component) Component) C51 5 CA 55.0 45.0 100.0  0.0 C52 5 CB50.0 50.0 100.0  0.0 C53 5 CA 50.0 50.0 100.0  0.0 C54 5 CC 54.4 45.696.1  3.9 C55 5 CA 50.0 50.0 98.0  2.0 C56 5 CA 50.0 50.0 90.0  10.0 C57 5 CA 52.0 48.0 96.2  3.8 C58 5 CA 53.0 47.0 93.4  6.6 C59 5 CA 54.046.0 95.9  4.1

D₁

D₅₀

D₉₀

Silica Based (D₉₀-

Component D₁₀ D₅₀ D₉₀ D₁₀)/

Type

D₅₀

TABLE 6 Performance Properties Sample Dk Df (5 GHz, Df (5 GHz, CTE No.(5 GHz) 20% RH) 80% RH) (ppm/° C.) CS1 2.55 0.0006 0.0009 25 CS2 2.600.0008 0.0009 24 CS3 2.53 0.0008 0.0018 31 CS4 3.02 0.0005 0.0005 56 CS52.64 0.0012 0.0026 30 CS6 3.04 0.0017 0.0025 40 CS7 2.71 0.0008 0.001336 CS8 2.83 0.0015 0.0026 42 CS9 2.82 0.0007 0.0014 31

Example 3

Sample dielectric substrates S13-S28 were configured and formedaccording to certain embodiments described herein.

Each sample dielectric substrate was formed using a cast film processwhere a fluoropolymer pre-treated polyimide carrier belt is passedthrough a dip pan containing an aqueous forming mixture (i.e. thecombination of the resin matrix component and the ceramic fillercomponent) at the base of the coating tower. The coated carrier beltthen passes through a metering zone in which metering bars remove excessdispersion from the coated carrier belt. After the metering zone, thecoated carrier belt passes into a drying zone maintained at atemperature between 82° C. and 121° C. to evaporate the water. Thecoated carrier belt with the dried film then passes through a bake zonemaintained at a temperature between 315° C. and 343° C. Finally, thecarrier belt passes through a fusing zone maintained at a temperaturebetween 349° C. and 399° C. to sinter, i.e. coalesce, the resin matrixmaterial. The coated carrier belt then passes through a cooling plenumfrom which it can be directed either to a subsequent dip pan to beginformation of a further layer of the film or to a stripping apparatus.When the desired film thickness is achieved, the films are stripped offof the carrier belt.

The resin matrix component for each sample dielectric substrates S13-S28is polytetrafluoroethylene (PTFE). Further configuration and compositiondetails of each dielectric substrate S13-S28, including detailsregarding the bonding layer type, thickness and percent, are summarizedin Table 7 below.

TABLE 7 Sample Dielectric Substrate Configuration and CompositionDielectric Substrate Composition First Filler Second Material- CeramicSilica Filler Ceramic Resin Based Material Filler Matrix Component(TiO₂) Component Component (vol. % of (vol. % of Sample Silica Based(vol. % of (vol. % of Ceramic Ceramic Bonding Layer Sample ThicknessComponent dielectric dielectric Filler Filler Thickness Percent No.(mil) Type substrate) substrate) Component) Component) Type (μm) (%) S134 A 54.0 46.0 100.0 0.0 PFA 1.5 3.0 S14 6 A 54.0 46.0 100.0 0.0 PFA 1.41.8 S15 4 A 54.0 46.0 100.0 0.0 PFA 1.6 3.1 S16 6 A 54.0 46.0  96.3 3.7PFA — — S17 4 A 50.0 50.0 100.0 0.0 PFA 0.5 1.0 S18 4 A 50.0 50.0 100.00.0 PFA 2.4 4.7 S19 4 A 54.0 46.0 100.0 0.0 PFA 2.8 5.5 S20 6 A 54.046.0 100.0 0.0 PFA 2.7 3.5 S21 6 A 54.0 46.0 100.0 0.0 PFA 2.5 3.3 S22 4A 54.0 46.0 100.0 0.0 PFA 2.0 3.9 S23 4 A 54.0 46.0 100.0 0.0 PFA 1.53.0 S24 4 A 54.0 46.0 100.0 0.0 PFA 1.6 3.1 S25 6 A 54.0 46.0 100.0 0.0PFA 1.6 2.1 S26 4 A 54.0 46.0 100.0 0.0 PFA 1.8 3.5 S27 4 A 54.0 46.0100.0 0.0 PFA 1.0 2.0 S28 6 A 54.0 46.0  96.3 3.7 PFA 1.0 1.3

D₁

D₅₀

D₉₀

S13-S28

S13-S28

TABLE 8 Performance Properties Sample Dk Df (5 GHz, Df (5 GHz, CTE No.(5 GHz) 20% RH) 80% RH) (ppm/° C.) S13 2.74 0.0004 0.0005 53 S14 2.770.0005 0.0006 54 S15 2.78 0.0004 0.0006 58 S16 2.92 0.0006 0.0007 46 S172.72 0.0004 0.0007 64 S18 2.68 0.0005 0.0005 69 S19 2.70 0.0005 0.000761 S20 2.69 0.0005 0.0005 57 S21 2.72 0.0005 0.0005 63 S22 2.76 0.00050.0006 58 S23 2.71 0.0004 0.0006 51 S24 2.71 0.0004 0.0006 64 S25 2.730.0004 0.0006 58 S26 2.73 0.0005 0.0006 61 S27 2.72 0.0004 0.0005 62 S282.98 0.0006 0.0007 52

Note that not all of the activities described above in the generaldescription or the examples are required, that a portion of a specificactivity may not be required, and that one or more further activitiesmay be performed in addition to those described. Still further, theorder in which activities are listed is not necessarily the order inwhich they are performed.

Benefits, other advantages, and solutions to problems have beendescribed above with regard to specific embodiments. However, thebenefits, advantages, solutions to problems, and any feature(s) that maycause any benefit, advantage, or solution to occur or become morepronounced are not to be construed as a critical, required, or essentialfeature of any or all the claims.

The specification and illustrations of the embodiments described hereinare intended to provide a general understanding of the structure of thevarious embodiments. The specification and illustrations are notintended to serve as an exhaustive and comprehensive description of allof the elements and features of apparatus and systems that use thestructures or methods described herein. Separate embodiments may also beprovided in combination in a single embodiment, and conversely, variousfeatures that are, for brevity, described in the context of a singleembodiment, may also be provided separately or in any subcombination.Further, reference to values stated in ranges includes each and everyvalue within that range. Many other embodiments may be apparent toskilled artisans only after reading this specification. Otherembodiments may be used and derived from the disclosure, such that astructural substitution, logical substitution, or another change may bemade without departing from the scope of the disclosure. Accordingly,the disclosure is to be regarded as illustrative rather thanrestrictive.

What is claimed is:
 1. A copper-clad laminate comprising: a copper foillayer, a fluoropolymer based adhesive layer overlying the copper foillayer, and a dielectric coating overlying the fluoropolymer basedadhesive layer, wherein the dielectric coating comprises: a resin matrixcomponent; and a ceramic filler component, wherein the ceramic fillercomponent comprises a first filler material, and wherein the dielectriccoating has an average thickness of not greater than about 20 microns.2. The copper-clad laminate of claim 1, wherein the fluoropolymer basedadhesive layer has an average thickness of at least about 0.2 micronsand not greater than about 7 microns.
 3. The copper-clad laminate ofclaim 1, wherein the fluoropolymer based adhesive layer is a PFA layer.4. The copper-clad laminate of claim 1, wherein the first fillermaterial comprises a particle size distribution span (PSDS) of notgreater than about 5, where PSDS is equal to (D₉₀−D₁₀)/D₅₀, where D₉₀ isequal to a D₉₀ particle size distribution measurement of the firstfiller material, D₁₀ is equal to a D₁₀ particle size distributionmeasurement of the first filler material, and D₅₀ is equal to a D₅₀particle size distribution measurement of the first filler material. 5.The copper-clad laminate of claim 1, wherein the first filler materialcomprises a silica based compound.
 6. The copper-clad laminate of claim1, wherein the first filler material comprises silica.
 7. Thecopper-clad laminate of claim 1, wherein the resin matrix comprises aperfluoropolymer.
 8. The copper-clad laminate of claim 1, wherein thecontent of the resin matrix component is at least about 50 vol. % andnot greater than about 63 vol. % for a total volume of the dielectriccoating.
 9. The copper-clad laminate of claim 8, wherein the content ofthe perfluoropolymer is at least about 50 vol. % and not greater thanabout 63 vol. % for a total volume of the dielectric coating.
 10. Thecopper-clad laminate of claim 1, wherein the content of the ceramicfiller component is at least about 30 vol. % and not greater than about57 vol. % for a total volume of the dielectric coating.
 11. Thecopper-clad laminate of claim 1, wherein the content of the first fillermaterial is at least about 80 vol. % and not greater than about 100 vol.% for a total volume of the ceramic filler component.
 12. Thecopper-clad laminate of claim 1, wherein the dielectric coatingcomprises a dissipation factor (5 GHz, 20% RH) of not greater than about3.5.
 13. A printed circuit board comprising a copper-clad laminate,wherein the copper-clad laminate comprises: a copper foil layer, afluoropolymer based adhesive layer overlying the copper foil layer, anda dielectric coating overlying the fluoropolymer based adhesive layer,wherein the dielectric coating comprises: a resin matrix component; anda ceramic filler component, wherein the ceramic filler componentcomprises a first filler material, and wherein the dielectric coatinghas an average thickness of not greater than 20 microns.
 14. The printedcircuit board of claim 13, wherein the fluoropolymer based adhesivelayer is a PFA layer.
 15. The printed circuit board of claim 13, whereinthe first filler material comprises a particle size distribution span(PSDS) of not greater than about 5, where PSDS is equal to(D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀ particle size distributionmeasurement of the first filler material, D₁₀ is equal to a D₁₀ particlesize distribution measurement of the first filler material, and D₅₀ isequal to a D₅₀ particle size distribution measurement of the firstfiller material.
 16. The printed circuit board of claim 13, wherein thefirst filler material comprises a silica based compound.
 17. The printedcircuit board of claim 13, wherein the first filler material comprisessilica.
 18. The printed circuit board of claim 13, wherein the resinmatrix comprises a perfluoropolymer.
 19. The printed circuit board ofclaim 13, wherein the content of the resin matrix component is at leastabout 50 vol. % and not greater than about 63 vol. % for a total volumeof the dielectric coating.
 20. A method of forming a copper-cladlaminate, wherein the method comprises: providing a copper foil layer,applying a fluoropolymer based adhesive layer overlying the copper foillayer, combining a resin matrix precursor component and a ceramic fillerprecursor component to form a forming mixture, forming the formingmixture into a dielectric coating overlying the fluoropolymer basedadhesive layer, wherein the dielectric coating has an average thicknessof not greater than about 20 microns.